參數(shù)資料
型號: IRFZ48NSPBF
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 2/10頁
文件大小: 306K
代理商: IRFZ48NSPBF
IRFZ48NS/LPbF
2
www.irf.com
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Parameter
Min. Typ. Max. Units
55
–––
–––
0.058 –––
–––
–––
2.0
–––
24
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
–––
78
–––
34
–––
50
–––
7.5
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 32A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 32A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 32A
V
DS
= 44V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 28V
I
D
= 32A
R
G
= 0.85
V
GS
= 10V, See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
I
AS
= 32A, L = 0.37mH
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
m
V
S
14
4.0
–––
25
250
100
-100
81
19
30
–––
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
nC
nH
C
iss
C
oss
C
rss
E
AS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
–––
–––
–––
1970 –––
470
120
700
–––
–––
190
pF
mJ
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 32A, V
GS
= 0V
T
J
= 25°C, I
F
= 32A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
68
220
1.3
100
330
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
64
210
*
Starting T
J
= 25°C, L = 0.37mH
R
G
= 25
, I
AS
= 32A. (See Figure 12)
I
SD
32A
-
di/d
220A/μs, V
DD
V
(BR)DSS
,
T
J
175°C
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
400μs; duty cycle
2%.
This is the destructive value not limited to the thermal limit.
This is the thermal limited value.
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