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參數(shù)資料
| 型號： | IRFZ48NSPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 306K |
| 代理商： | IRFZ48NSPBF |
Advanced Process Technology
Surface Mount (IRFZ48NS)
Low-profile through-hole (IRFZ48NL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Advanced HEXFET
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the owest possible on-resistance
in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRFZ48NL) is available for low-
profile applications.
Absolute Maximum Ratings
V
DSS
= 55V
R
DS(on)
= 0.014
I
D
= 64A
D2
TO-262
S
D
G
R
qJC
R
qJA
www.irf.com
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
–––
1.15
40
C/W
1
Parameter
Max.
64
45
210
3.8
130
0.83
± 20
32
13
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
A
mJ
V/ns
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFZ48PBF | HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018ヘ , ID = 50A ) |
| IRFZ48RSPBF | HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018ヘ , ID = 50A ) |
| IRFZ48RLPBF | HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018ヘ , ID = 50A ) |
| IRFZ48ZLPBF | AUTOMOTIVE MOSFET |
| IRFZ48ZPBF | AUTOMOTIVE MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFZ48NSPBF | 制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes |
| IRFZ48NSTRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 64A 3-Pin(2+Tab) D2PAK T/R |
| IRFZ48NSTRLPBF | 功能描述:MOSFET MOSFT 55V 64A 14mOhm 54nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ48NSTRR | 功能描述:MOSFET N-CH 55V 64A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFZ48NSTRRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 64A 3-Pin(2+Tab) D2PAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 64A 3PIN D2PAK - Tape and Reel |
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