參數(shù)資料
型號(hào): IRFZ48RLPBF
廠商: International Rectifier
英文描述: HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018ヘ , ID = 50A )
中文描述: HEXFET功率MOSFET(減振鋼板基本\u003d 60V的,的RDS(on)\u003d 0.018ヘ,身份證\u003d 50A條)
文件頁(yè)數(shù): 8/10頁(yè)
文件大?。?/td> 266K
代理商: IRFZ48RLPBF
IRFZ48RS/LPbF
8
www.irf.com
Dimensions are shown in millimeters (inches)
Note: "P" in assembly line
F530S
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
F530S
A = ASSEMBLY SITE CODE
WEEK 02
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
RECTIFIER
LOGO
INTERNATIONAL
LOT CODE
ASSEMBLY
DATE CODE
PART NUMBER
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFZ48RPBF 功能描述:MOSFET N-Chan 60V 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFZ48RS 功能描述:MOSFET N-Chan 60V 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFZ48RS_11 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET
IRFZ48RSPBF 功能描述:MOSFET N-Chan 60V 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFZ48S 功能描述:MOSFET N-Chan 60V 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube