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參數(shù)資料
| 型號： | IRFZ34VL |
| 廠商： | International Rectifier |
| 英文描述： | Advanced Process Technology |
| 中文描述： | 先進的工藝技術(shù) |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 128K |
| 代理商： | IRFZ34VL |
IRFZ34VS/IRFZ34VL
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 30A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 30A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
70
99
1.6
110
150
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
30
120
A
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25
°
C, L = 180μH
R
G
= 25
, I
AS
= 30A. (See Figure 12)
I
SD
≤
30A, di/dt
≤
250A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175
°
C
Notes:
Pulse width
≤
400μs; duty cycle
≤
2%.
Uses IRFZ34V data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
Parameter
Min. Typ. Max. Units
60
–––
–––
0.062
–––
–––
–––
2.0
–––
15
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
–––
65
–––
31
–––
40
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 18A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 18A
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 150
°
C
V
GS
= 20V
V
GS
= -20V
I
D
= 30A
V
DS
= 48V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 30V
I
D
= 30A
R
G
= 12
V
GS
= 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/
°
C
m
V
S
28
4.0
–––
25
250
100
-100
49
12
18
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
E
AS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
–––
–––
–––
1120
–––
250
59
260
–––
–––
81
pF
mJ
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
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|---|---|
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IRFZ34VLPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
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| IRFZ34VS | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Advanced Process Technology |
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| IRFZ35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-220AB |
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