型號 廠商 描述
km23c16005dg
2 3 4 5
SAMSUNG SEMICONDUCTOR CO. LTD. 16M-Bit (2Mx8 /1Mx16)CMOS Mask ROM(16M位 (2Mx8 /1Mx16) CMOS掩膜ROM)
km23c16101c
2 3 4
SAMSUNG SEMICONDUCTOR CO. LTD. 16M-Bit (2Mx8)CMOS Mask ROM(16M位 (2Mx8) CMOS掩膜ROM)
km23c32101c
2 3 4
SAMSUNG SEMICONDUCTOR CO. LTD. 32M-Bit (4Mx8) CMOS MASK ROM(32M位 (4Mx8) CMOS掩膜ROM)
km23c32120c
2 3 4
SAMSUNG SEMICONDUCTOR CO. LTD. 32M-Bit (4Mx8) CMOS Mask ROM(32M位 (4Mx8) CMOS掩膜ROM)
km23c4100d
2 3 4
SAMSUNG SEMICONDUCTOR CO. LTD. 4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M位 (512Kx8 /256Kx16) CMOS掩膜ROM)
km23c4100dg
2 3 4
SAMSUNG SEMICONDUCTOR CO. LTD. 4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M位 (512Kx8 /256Kx16) CMOS掩膜ROM)
km23c4200d
2 3 4
SAMSUNG SEMICONDUCTOR CO. LTD. 4M-Bit (256Kx16) CMOS Mask ROM (EPROM Type)(4M位 (256Kx16) CMOS掩膜ROM)
km23c8100det
2 3 4
SAMSUNG SEMICONDUCTOR CO. LTD. 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M位 (1Mx8 /512Kx16) CMOS掩膜 ROM)
km23c8100dt
2 3 4
SAMSUNG SEMICONDUCTOR CO. LTD. 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M位 (1Mx8 /512Kx16) CMOS掩膜 ROM)
km23c8100d
2 3
SAMSUNG SEMICONDUCTOR CO. LTD. 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M位(1Mx8 /512Kx16) CMOS掩膜ROM)
km23c8100dg
2 3
SAMSUNG SEMICONDUCTOR CO. LTD. 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M位(1Mx8 /512Kx16) CMOS掩膜ROM)
km23v32005bg
2 3 4 5
SAMSUNG SEMICONDUCTOR CO. LTD. 32M-Bit (4Mx8/2Mx16) COMS MASK ROM
km23v4100d
2 3 4
SAMSUNG SEMICONDUCTOR CO. LTD. 4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M位 (512Kx8 /256Kx16) CMOS掩膜ROM)
km23v4100dg
2 3 4
SAMSUNG SEMICONDUCTOR CO. LTD. 4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M位 (512Kx8 /256Kx16) CMOS掩膜ROM)
km23v8100dt
2 3 4
SAMSUNG SEMICONDUCTOR CO. LTD. 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M位 (1Mx8 /512Kx16) CMOS掩膜ROM)
km23v8100det
2 3 4
SAMSUNG SEMICONDUCTOR CO. LTD. 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M位 (1Mx8 /512Kx16) CMOS掩膜ROM)
km2520src03
2 3 4
KINGBRIGHT CORP SUBMINIATURE SOLID STATE LAMP
km2520sgd03
2 3 4
KINGBRIGHT CORP SUBMICIATURE SOLID STATE LAMP
km2520surc03
2 3 4
KINGBRIGHT CORP RTP, 4-wire, 7-in W 16:9, 1.1mm glass, P/F, 82%, AG5, AS, Auto, 50mm tail, RoHS
km29u128k1
SAMSUNG SEMICONDUCTOR CO. LTD. 16M x 8 Bit NAND Flash Memory(16M x 8位 NAND閃速存儲器)
km29w040at
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. 512K x 8 bit NAND Flash Memory
km4101ic8
2 3 4 5 6 7 8 9 10 11
FAIRCHILD SEMICONDUCTOR CORP PTSE 16C 16#16 PIN PLUG
km4101ic8tr3
2 3 4 5 6 7 8 9 10 11
FAIRCHILD SEMICONDUCTOR CORP PTSE 61C 61#20 PIN PLUG
km4100ic8
2 3 4 5 6 7 8 9 10 11
FAIRCHILD SEMICONDUCTOR CORP Low Cost, +2.7V and +5V, 260MHz Rail-to-Rail Amplifiers
km4100ic8tr3
2 3 4 5 6 7 8 9 10 11
FAIRCHILD SEMICONDUCTOR CORP CAP,FXD,CER,U 00000.10,0100.0V,20.0%,1206
km4100
2 3 4 5 6 7 8 9 10 11
Fairchild Semiconductor Corporation Low Cost, +2.7V and +5V, 260MHz Rail-to-Rail Amplifiers
km4101
2 3 4 5 6 7 8 9 10 11
Fairchild Semiconductor Corporation Low Cost, +2.7V and +5V, 260MHz Rail-to-Rail Amplifiers
km4100it5
2 3 4 5 6 7 8 9 10 11
FAIRCHILD SEMICONDUCTOR CORP Low Cost, +2.7V and +5V, 260MHz Rail-to-Rail Amplifiers
km4100it5tr3
2 3 4 5 6 7 8 9 10 11
FAIRCHILD SEMICONDUCTOR CORP Low Cost, +2.7V and +5V, 260MHz Rail-to-Rail Amplifiers
km4101it6
2 3 4 5 6 7 8 9 10 11
FAIRCHILD SEMICONDUCTOR CORP Low Cost, +2.7V and +5V, 260MHz Rail-to-Rail Amplifiers
km4101it6tr3
2 3 4 5 6 7 8 9 10 11
FAIRCHILD SEMICONDUCTOR CORP Low Cost, +2.7V and +5V, 260MHz Rail-to-Rail Amplifiers
km4132g271aq-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. 128K x 32Bit x 2 Banks Synchronous Graphic RAM
km4132g271a-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. 128K x 32Bit x 2 Banks Synchronous Graphic RAM
km4132g271a-12
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. 128K x 32Bit x 2 Banks Synchronous Graphic RAM
km4132g271a-8
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. 128K x 32Bit x 2 Banks Synchronous Graphic RAM
km4132g271a
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. 128K x 32Bit x 2 Banks Synchronous Graphic RAM
km4132g271btq(r)-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
km4132g271btq(r)-7
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
km4132g271btq(r)-8
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
km4132g271b
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
km4132g271bq(r)-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
km4132g271bq(r)-7
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
km4132g271bq(r)-8
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
km4132g271btq-8
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
km4132g512
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. 256K x 32Bit x 2 Banks Synchronous Graphic RAM(256K x 32位 x 2組同步圖形 RAM)
km416c1200b
2 3 4 5 6 7 8
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
km416c1000b
2 3 4 5 6 7 8
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
km416v1000b
2 3 4 5 6 7 8
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
km416v1200b
2 3 4 5 6 7 8
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
km416c1200c
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. 12.4K OHM 1% 1/2W M/F LEADED RESISTOR