- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373153 > KM4132G271BTQ-8 (SAMSUNG SEMICONDUCTOR CO. LTD.) 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL PDF資料下載
參數(shù)資料
| 型號： | KM4132G271BTQ-8 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| 中文描述： | 128K的x 32位× 2銀行同步圖形RAM的LVTTL |
| 文件頁數(shù)： | 3/51頁 |
| 文件大?。?/td> | 1033K |
| 代理商： | KM4132G271BTQ-8 |
第1頁第2頁當前第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁
KM4132G271B
CMOS SGRAM
- 3 -
Rev. 2.4 (May 1998)
The KM4132G271B is 8,388,608 bits synchronous high data
rate Dynamic RAM organized as 2 x 131,072 words by 32 bits,
fabricated with SAMSUNG's high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock. I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst length, and programmable latencies allows the same
device to be useful for a variety of high bandwidth, high perfor-
mance memory system applications.
Write per bit and 8 columns block write improves performance in
graphics systems.
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Dual bank / Pulse RAS
MRS cycle with address key programs
-. CAS Latency (2, 3)
-. Burst Length (1, 2, 4, 8 & full page)
-. Burst Type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the
system clock
Burst Read Single-bit Write operation
DQM 0-3 for byte masking
Auto & self refresh
16ms refresh period (1K cycle)
100 Pin PQFP, TQFP (14 x 20 mm)
Reverse Type Package offers the best signal routing
Graphics Features
SMRS cycle.
-. Load mask register
-. Load color register
Write Per Bit(Old Mask)
Block Write(8 Columns)
GENERAL DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
128K x 32Bit x 2 Banks Synchronous Graphic RAM
T
CLK
CKE
CS
RAS
CAS
WE
DSF
DQMi
BLOCK
WRITE
CONTROL
LOGIC
DQi
P
R
L
B
128Kx32
CELL
ARRAY
128Kx32
CELL
ARRAY
SERIAL
COUNTER
COLUMN ADDRESS
BUFFER
ROW DECORDER
BANK SELECTION
ADDRESS REGISTER
REFRESH
COUNTER
ROW ADDRESS
BUFFER
I
MASK
REGISTER
COLOR
REGISTER
MUX
WRITE
CONTROL
LOGIC
M
C
D
S
A
COLUMN
MASK
(i=0~31)
DQMi
CLOCK
ADDRESS(A
0
~A
9
)
DQMi
O
ORDERING INFORMATION
* ~G271BQR# / ~G271BTQR# : Reverse Type Package
Part NO.
Max Freq.
143MHz
125MHz
100MHz
143MHz
125MHz
100MHz
Interface
Package
KM4132G271BQ(R)-7
KM4132G271BQ(R)-8
KM4132G271BQ(R)-10
KM4132G271BTQ(R)-7
KM4132G271BTQ(R)-8
KM4132G271BTQ(R)-10
LVTTL
100 PQFP
LVTTL
100 TQFP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM4132G512 | 256K x 32Bit x 2 Banks Synchronous Graphic RAM(256K x 32位 x 2組同步圖形 RAM) |
| KM416C1200B | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C1000B | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1000B | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1200B | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM4132G271BTQR-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BTQR-7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BTQR-8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271Q10 | 制造商:SAMSUNG 功能描述:* |
| KM4132G51207 | 制造商:SAMSUNG 功能描述:New |
發(fā)布緊急采購，3分鐘左右您將得到回復。