參數(shù)資料
型號: KM4132G271BTQ-8
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
中文描述: 128K的x 32位× 2銀行同步圖形RAM的LVTTL
文件頁數(shù): 48/51頁
文件大?。?/td> 1033K
代理商: KM4132G271BTQ-8
KM4132G271B
CMOS SGRAM
- 48
Rev. 2.4 (May 1998)
FUNCTION TRUTH TABLE(TABLE 1)
Current
State
CS
RAS
CAS
WE
DSF
BA
(A
9
)
ADDR
ACTION
NOTE
IDLE
H
L
X
H
X
H
X
H
X
X
X
X
X
X
NOP
NOP
L
L
L
L
H
H
L
L
H
L
H
H
L
X
H
H
X
X
L
H
X
BA
BA
BA
X
ILLEGAL
ILLEGAL
Row Active ; Latch Row Address ; Non-IO Mask
Row Active ; Latch Row Address ; IO Mask
2
2
CA
RA
RA
L
L
L
L
L
L
L
L
H
H
L
L
L
L
H
H
L
H
L
H
BA
X
X
X
PA
X
X
X
NOP
ILLEGAL
Auto Refresh or Self Refresh
ILLEGAL
4
5
L
L
H
L
L
L
X
H
L
L
X
H
L
L
X
H
L
H
X
X
OP Code
OP Code
X
X
Mode Register Access
Special Mode Register Access
NOP
NOP
5
6
Row
Active
X
X
L
L
L
L
H
H
H
H
H
L
L
L
L
H
H
L
X
L
H
L
X
BA
X
BA
X
ILLEGAL
Begin Read ; Latch CA ; Determine AP
ILLEGAL
Begin Write ;Latch CA ; Determine AP
2
CA,AP
X
CA,AP
L
L
L
L
H
L
L
L
L
H
H
H
L
H
L
L
H
X
L
H
BA
BA
BA
X
CA,AP
RA
PA
X
Block Write ;Latch CA ; Determine AP
ILLEGAL
Precharge
ILLEGAL
2
L
L
L
H
L
L
L
X
L
L
L
X
H
L
L
X
X
L
H
X
X
X
X
X
ILLEGAL
ILLEGAL
Special Mode Register Access
NOP(Continue Burst to End --> Row Active)
OP Code
X
6
Read
X
L
L
L
L
H
H
H
H
H
H
H
L
H
L
L
H
X
L
H
L
X
X
X
BA
X
X
X
NOP(Continue Burst to End --> Row Active)
Term burst --> Row active
ILLEGAL
Term burst ; Begin Read ; Latch CA ; Determine AP
CA,AP
3
L
L
L
L
H
H
H
L
L
L
L
H
H
L
L
H
H
L
H
X
X
BA
BA
BA
X
ILLEGAL
Term burst ; Begin Write ; Latch CA ; Determine AP
Term burst ; Block Write ; Latch CA ; Determine AP
ILLEGAL
CA,AP
CA.AP
RA
3
3
2
L
L
L
H
L
L
L
X
H
H
L
X
L
L
X
X
L
H
X
X
BA
X
X
X
PA
X
X
X
Term Burst ; Precharge timing for Reads
ILLEGAL
ILLEGAL
NOP(Continue Burst to End --> Row Active)
3
Write
L
L
L
L
L
H
H
H
H
H
H
H
H
L
L
H
L
L
H
H
X
L
H
L
H
X
X
X
BA
X
X
X
X
NOP(Continue Burst to End --> Row Active)
Term burst --> Row active
ILLEGAL
Term burst ; Begin Read ; Latch CA ; Determine AP
ILLEGAL
CA,AP
X
3
L
L
H
H
L
L
L
L
L
H
BA
BA
CA,AP
CA,AP
Term burst ; Begin Write ; Latch CA ; Determine AP
Term burst ; Block Write ; Latch CA ; Determine AP
3
3
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