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參數(shù)資料
| 型號： | KM4132G271BTQ-8 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| 中文描述： | 128K的x 32位× 2銀行同步圖形RAM的LVTTL |
| 文件頁數(shù)： | 30/51頁 |
| 文件大?。?/td> | 1033K |
| 代理商： | KM4132G271BTQ-8 |
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KM4132G271B
CMOS SGRAM
- 30
Rev. 2.4 (May 1998)
*Note :
1. All input can be don't care when CS is high at the CLK high going edge.
2. Bank active & read/write are controlled by A
9
.
3. Enable and disable auto precharge function are controlled by A
8
in read/write command.
4. A
8
and A
9
control bank precharge when precharge command is asserted.
5. Enable and disable Write-per Bit function are controlled by DSF in Row Active command.
6. Block write/normal write is controlled by DSF.
A
9
Active & Read/Write
0
Bank A
1
Bank B
A
8
A9
Operation
0
0
Disable auto precharge, leave bank A active at end of burst.
1
Disable auto precharge, leave bank B active at end of burst.
1
0
Enable auto precharge, precharge bank A at end of burst.
1
Enable auto precharge, precharge bank B at end of burst.
A
8
A
9
Precharge
0
0
Bank A
0
1
Bank B
1
X
Both Bank
A
9
DSF
Operation
0
L
Bank A row active, disable write per bit function for bank A
H
Bank A row active, enable write per bit function for bank A
1
L
Bank B row active, disable write per bit function for bank B
H
Bank B row active, enable write per bit function for bank B
DSF
Operation
Minimum cycle time
L
Normal write
t
CCD
t
BWC
H
Block write
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|---|---|
| KM4132G271BTQR-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BTQR-7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BTQR-8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
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