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參數(shù)資料
| 型號： | KM416C1200B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 100萬× 16的CMOS動態(tài)隨機存儲器的快速頁面模式 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 84K |
| 代理商： | KM416C1200B |
KM416C1000B, KM416C1200B
KM416V1000B, KM416V1200B
CMOS DRAM
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5,-6 or -7), power
consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-
before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This
1Mx16 Fast Page Mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
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Part Identification
- KM416C1000B/B-L (5V, 4K Ref.)
- KM416C1200B/B-L (5V, 1K Ref.)
- KM416V1000B/B-L (3.3V, 4K Ref.)
- KM416V1200B/B-L (3.3V, 1K Ref.)
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Fast Page Mode operation
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2 CAS Byte/Word Read/Write operation
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CAS-before-RAS refresh capability
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RAS-only and Hidden refresh capability
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Self-refresh capability (L-ver only)
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TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
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Early Write or output enable controlled write
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JEDEC Standard pinout
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Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II)
400mil packages
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Single +5V
10% power supply (5V product)
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Single +3.3V
0.3V power supply (3.3V product)
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Row Decoder
Column Decoder
Lower
Data out
Buffer
RAS
UCAS
LCAS
W
Vcc
Vss
DQ0
to
DQ7
A0-A11
(A0 - A9)
*1
A0 - A7
(A0 - A9)
*1
Memory Array
1,048,576 x16
Cells
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
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Refresh Cycles
Part
NO.
V
CC
Refresh
cycle
Refresh period
Normal
L-ver
C1000B
V1000B
C1200B
V1200B
5V
3.3V
5V
3.3V
4K
64ms
128ms
1K
16ms
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Perfomance Range
Speed
-5
-6
-7
t
RAC
50ns
60ns
70ns
t
CAC
15ns
15ns
20ns
t
RC
90ns
110ns
130ns
t
PC
35ns
40ns
45ns
Remark
5V/3.3V
5V/3.3V
5V/3.3V
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Active Power Dissipation
Speed
3.3V
5V
4K
396
360
324
1K
576
540
504
4K
605
550
495
1K
880
825
770
-5
-6
-7
Unit : mW
S
Upper
Data in
Buffer
Upper
Data out
Buffer
Lower
Data in
Buffer
DQ8
to
DQ15
OE
Note)
*1
: 1K Refresh
相關PDF資料 |
PDF描述 |
|---|---|
| KM416C1000B | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1000B | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1200B | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C1200C | 12.4K OHM 1% 1/2W M/F LEADED RESISTOR |
| KM416C1000C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KM416C1200C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C1200CT-L6 | 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 1M x 16, 44 Pin, Plastic, TSOP |
| KM416C1204BJ6 | 制造商:SAM 功能描述:NEW |
| KM416C1204BT-6 | 制造商:Samsung Electro-Mechanics 功能描述:1M X 16 EDO DRAM, 60 ns, PDSO44 |
| KM416C1204C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
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