- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373153 > KM416C1200C (SAMSUNG SEMICONDUCTOR CO. LTD.) 12.4K OHM 1% 1/2W M/F LEADED RESISTOR PDF資料下載
參數(shù)資料
| 型號： | KM416C1200C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 12.4K OHM 1% 1/2W M/F LEADED RESISTOR |
| 中文描述： | 100萬× 16的CMOS動態(tài)隨機(jī)存儲器的快速頁面模式 |
| 文件頁數(shù)： | 1/34頁 |
| 文件大?。?/td> | 767K |
| 代理商： | KM416C1200C |
當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁
KM416C1000C, KM416C1200C
KM416V1000C, KM416V1200C
CMOS DRAM
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power con-
sumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-
before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This
1Mx16 Fast Page Mode DRAM family is fabricated using Samsung
′
s advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
Part Identification
- KM416C1000C/C-L (5V, 4K Ref.)
- KM416C1200C/C-L (5V, 1K Ref.)
- KM416V1000C/C-L (3.3V, 4K Ref.)
- KM416V1200C/C-L (3.3V, 1K Ref.)
Fast Page Mode operation
2 CAS Byte/Word Read/Write operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Self-refresh capability (L-ver only)
TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
Early Write or output enable controlled write
JEDEC Standard pinout
Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II)
400mil packages
Single +5V
±
10% power supply (5V product)
Single +3.3V
±
0.3V power supply (3.3V product)
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Row Decoder
Column Decoder
Lower
Data out
Buffer
RAS
UCAS
LCAS
W
Vcc
Vss
DQ0
to
DQ7
A0-A11
(A0 - A9)
*1
A0 - A7
(A0 - A9)
*1
Memory Array
1,048,576 x16
Cells
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Refresh Cycles
Part
NO.
V
CC
Refresh
cycle
Refresh period
Normal
L-ver
C1000C
V1000C
C1200C
V1200C
5V
3.3V
5V
3.3V
4K
64ms
128ms
1K
16ms
Perfomance Range
Speed
t
RAC
-5
50ns
-6
60ns
t
CAC
15ns
15ns
t
RC
90ns
110ns
t
PC
35ns
40ns
Remark
5V/3.3V
5V/3.3V
Active Power Dissipation
Speed
3.3V
5V
4K
324
288
1K
504
468
4K
495
440
1K
770
715
-5
-6
Unit : mW
S
Upper
Data in
Buffer
Upper
Data out
Buffer
Lower
Data in
Buffer
DQ8
to
DQ15
OE
Note)
*1
: 1K Refresh
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416C1000C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1000C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1200C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C1204C-6 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416V12CT-L6 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416C1200CT-L6 | 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 1M x 16, 44 Pin, Plastic, TSOP |
| KM416C1204BJ6 | 制造商:SAM 功能描述:NEW |
| KM416C1204BT-6 | 制造商:Samsung Electro-Mechanics 功能描述:1M X 16 EDO DRAM, 60 ns, PDSO44 |
| KM416C1204C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C1204C-45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。