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參數(shù)資料
| 型號(hào)： | KM4132G271A-8 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| 中文描述： | 128K的x 32Bit的× 2銀行同步圖形內(nèi)存 |
| 文件頁(yè)數(shù)： | 7/48頁(yè) |
| 文件大?。?/td> | 1000K |
| 代理商： | KM4132G271A-8 |
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KM4132G271A
CMOS SGRAM
Rev.0 (August 1997)
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Parameter
Symbol
Version
Unit
Note
-8
-10
-12
Row active to row active delay
t
RRD(min)
16
20
24
ns
1
RAS to CAS delay
t
RCD(min)
16
20
24
ns
1
Row precharge time
t
RP(min)
24
26
30
ns
1
Row active time
t
RAS(min)
48
50
60
ns
1
t
RAS(max)
100
us
Row cycle time
t
RC(min)
80
80
90
ns
1
Last data in to new col. address delay
t
CDL(min)
1
CLK
2
Last data in to row precharge
t
RDL(min)
1
CLK
2
Block write data-in to PRE command delay
t
BPL(min)
16
20
24
ns
Block write data-in to Active(REF)
command period(Auto precharge)
t
BAL(min)
40
46
54
ns
Last data in to burst stop
t
BDL(min)
1
CLK
2
Col. address to col. address delay
t
CCD(min)
1
CLK
3
Block write cycle time
t
BWC(min)
16
20
24
ns
1, 4
Number of valid output data
CAS Latency=3
2
CLK
5
CAS Latency=2
1
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then
rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change except block write cycle.
4. This parameter means minimum CAS to CAS delay at block write cycle only.
5. In case of row precharge interrupt, auto precharge and read burst stop.
Note :
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM4132G271A | 128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271BTQ(R)-10 | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BTQ(R)-7 | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BTQ(R)-8 | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271B | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM4132G271AQ-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BQ(R)-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BQ(R)-7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BQ(R)-8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
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