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參數(shù)資料
| 型號： | KM4132G271A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| 中文描述： | 128K的x 32Bit的× 2銀行同步圖形內(nèi)存 |
| 文件頁數(shù)： | 1/48頁 |
| 文件大?。?/td> | 1000K |
| 代理商： | KM4132G271A |
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KM4132G271A
CMOS SGRAM
Rev.0 (August 1997)
The KM4132G271A is 8,388,608 bits synchronous high data
rate Dynamic RAM organized as 2 x 131,072 words by 32 bits,
fabricated with SAMSUNG's high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock. I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst length, and programmable latencies allows the same
device to be useful for a variety of high bandwidth, high perfor-
mance memory system applications.
Write per bit and 8 columns block write improves performance in
graphics systems.
ü
JEDEC standard 3.3V power supply
ü
LVTTL compatible with multiplexed address
ü
Dual bank / Pulse RAS
ü
MRS cycle with address key programs
-. CAS Latency (2, 3)
-. Burst Length (1, 2, 4, 8 & full page)
-. Burst Type (Sequential & Interleave)
ü
All inputs are sampled at the positive going edge of the
system clock
ü
Burst Read Single-bit Write operation
ü
DQM 0-3 for byte masking
ü
Auto & self refresh
ü
16ms refresh period (1K cycle)
ü
100 Pin QFP
Graphics Features
ü
SMRS cycle.
-. Load mask register
-. Load color register
ü
Write Per Bit(Old Mask)
ü
Block Write(8 Columns)
GENERAL DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
128K x 32Bit x 2 Banks Synchronous Graphic RAM
ORDERING INFORMATION
Part NO.
Cycle
time
Clock
f
Access
time@CL=3
KM4132G271A-8
KM4132G271A-10
KM4132G271A-12
8ns
10ns
12ns
125MHz
100MHz
83MHz
7.0ns
7.0ns
9.0ns
T
CLK
CKE
CS
RAS
CAS
WE
DSF
DQMi
BLOCK
WRITE
CONTROL
LOGIC
DQi
P
R
L
B
128Kx32
CELL
ARRAY
128Kx32
CELL
ARRAY
SERIAL
COUNTER
COLUMN ADDRESS
BUFFER
ROW DECORDER
BANK SELECTION
ADDRESS REGISTER
REFRESH
COUNTER
ROW ADDRESS
BUFFER
I
MASK
REGISTER
COLOR
REGISTER
MUX
WRITE
CONTROL
LOGIC
M
C
D
S
A
COLUMN
MASK
(i=0~31)
DQMi
CLOCK ADDRESS(A
0
~A
9
)
DQMi
O
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM4132G271BTQ(R)-10 | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BTQ(R)-7 | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BTQ(R)-8 | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271B | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BQ(R)-10 | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM4132G271A-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271A-12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271A-8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271AQ-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
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