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參數(shù)資料
| 型號： | KM4132G271A-8 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| 中文描述： | 128K的x 32Bit的× 2銀行同步圖形內(nèi)存 |
| 文件頁數(shù)： | 4/48頁 |
| 文件大小： | 1000K |
| 代理商： | KM4132G271A-8 |
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KM4132G271A
CMOS SGRAM
Rev.0 (August 1997)
DECOUPLING CAPACITANCE GUIDE LINE
Recommended decoupling capacitance added to power line at board.
Parameter
Symbol
Value
Unit
Decoupling Capacitance between V
DD
and V
SS
C
DC1
0.1 + 0.01
uF
Decoupling Capacitance between V
DDQ
and V
SSQ
C
DC2
0.1 + 0.01
uF
1. V
DD
and V
DDQ
pins are separated each other.
All V
DD
pins are connected in chip. All V
DDQ
pins are connected in chip.
2. V
SS
and V
SSQ
pins are separated each other
All V
SS
pins are connected in chip. All V
SSQ
pins are connected in chip.
Note :
ABSOLUTE MAXIMUM RATINGS
(Voltage referenced to V
SS
)
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
supply relative to Vss
V
DD
, V
DDQ
-1.0 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
é
Power dissipation
P
D
1
W
Short circuit current
I
OS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
, V
DDQ
3.0
3.3
3.6
V
Input high voltage
V
IH
2.0
3.0
V
DD
+0.3
V
Input low voltage
V
IL
-0.3
0
0.8
V
Note 1
Output high voltage
V
OH
2.4
-
-
V
I
OH
= -2mA
Output low voltage
V
OL
-
-
0.4
V
I
OL
= 2mA
Input leakage current
I
IL
-5
-
5
§
§
Note 2
Output leakage current
I
OL
-5
-
5
Note 3
Output Loading Condition
see figure 1
1. V
IL
(min) = -1.5V AC(pulse width
5ns).
2. Any input 0V
V
IN
V
DD
+ 0.3V, all other pins are not under test = 0V.
3. Dout is disabled, 0V
V
OUT
V
DD.
Note :
CAPACITANCE
(V
DD
/V
DDQ
= 3.3V, T
A
= 25
é
, f = 1MHz)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A
0
~ A
9
)
C
IN1
-
4
pF
Input capacitance
(CLK, CKE, CS, RAS, CAS, WE, DSF & DQM)
C
IN2
-
4
pF
Data input/output capacitance (DQ
0
~ DQ
31
)
C
OUT
-
5
pF
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| KM4132G271AQ-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BQ(R)-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BQ(R)-7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BQ(R)-8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
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