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參數(shù)資料
| 型號： | KM4132G271AQ-10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| 中文描述： | 128K的x 32Bit的× 2銀行同步圖形內(nèi)存 |
| 文件頁數(shù)： | 10/48頁 |
| 文件大小： | 1000K |
| 代理商： | KM4132G271AQ-10 |
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KM4132G271A
CMOS SGRAM
Rev.0 (August 1997)
SGRAM vs SDRAM
If DSF is low, SGRAM functionality is identical to SDRAM functionality
.
SGRAM can be used as an unified memory by the appropriate DSF control
--> SGRAM=Graphic Memory + Main Memory
SDRAM Function
MRS
Bank Active
Write
DSF
L
H
L
H
L
H
SGRAM
Function
MRS
SMRS
Bank Active
with
Write per bit
Disable
Bank Active
with
Write per bit
Enable
Normal
Write
Block
Write
3. Auto refresh functions as same as CBR refresh of DRAM.
The automatical precharge without Row precharge command is meant by "Auto".
Auto/Self refresh can be issued only at both precharge state.
4. A
9
: Bank select address.
If "Low" at read, (block) write, Row active and precharge, bank A is selected.
If "High" at read, (block) write, Row active and precharge, bank B is selected.
If A
8
is "High" at Row precharge, A
9
is ignored and both banks are selected.
5. It is determined at Row active cycle.
whether Normal/Block write operates in write per bit mode or not.
For A bank write, at A bank Row active, for B bank write, at B bank Row active.
Terminology : Write per bit =I/O mask
(Block) Write with write per bit mode=Masked(Block) Write
6. During burst read or write with auto precharge, new read/(block) write command cannot be issued.
Another bank read/(block) write command can be issued at
t
RP
after the end of burst.
7. Burst stop command is valid only at full page burst length.
8. DQM sampled at positive going edge of a CLK.
masks the data-in at the very CLK(Write DQM latency is 0)
but makes Hi-Z state the data-out of 2 CLK cycles after.(Read DQM latency is 2)
9. Graphic features added to SDRAM's original features.
If DSF is tied to low, graphic functions are disabled and chip operates as a 8M SDRAM with 32 DQ's.
SIMPLIFIED TRUTH TABLE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM4132G271A-10 | 128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271A-12 | 128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271A-8 | 128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271A | 128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271BTQ(R)-10 | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM4132G271B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BQ(R)-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BQ(R)-7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BQ(R)-8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BQ-10 | 制造商:Samsung Semiconductor 功能描述: 制造商:Samsung Semiconductor 功能描述:SGRAM, 2X128KX32, 100 Pin, Plastic, QFP 制造商:SEC 功能描述:SGRAM, 2X128KX32, 100 Pin, Plastic, QFP |
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