參數(shù)資料
型號: KM23C16101C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 16M-Bit (2Mx8)CMOS Mask ROM(16M位 (2Mx8) CMOS掩膜ROM)
中文描述: 1,600位(2Mx8)的CMOS掩模ROM(1,600位(2Mx8)的CMOS掩膜光盤)
文件頁數(shù): 1/4頁
文件大?。?/td> 57K
代理商: KM23C16101C
KM23C16101C
CMOS MASK ROM
Pin Name
Pin Function
A
0
- A
20
Address Inputs
Q
0
- Q
7
Data Outputs
OE
Output Enable
V
CC
Power ( +5V)
V
SS
Ground
N.C
No Connection
16M-Bit (2Mx8) CMOS MASK ROM
The KM23C16101C is a fully static mask programmable ROM
organized 2,097,152x8 bit. It is fabricated uning silicon gate
CMOS process technology.
This device operates with a 5V single power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, It requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The KM23C16101C is packaged in a 36-DIP.
GENERAL DESCRIPTION
FEATURES
2,097,152 x 8 bit organization
Fast access time : 100ns(Max.)
Supply voltage : single +5V
Current consumption
Operating : 50mA(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package
-. KM23C16101C : 36-DIP-600
A
20
X
AND
DECODER
BUFFERS
A
0
Y
AND
DECODER
BUFFERS
MEMORY CELL
MATRIX
(2,097,152x8)
SENSE AMP.
CONTROL
LOGIC
DATA OUT
BUFFERS
OE
.
.
.
.
.
.
.
.
Q
0
Q
7
. . .
PIN CONFIGURATION
FUNCTIONAL BLOCK DIAGRAM
A
20
N.C
A
17
A
18
A
15
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
Q
1
Q
2
Q
3
DIP
KM23C16101C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
V
SS
21
20
19
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
Q
7
OE
A
10
A
16
A
11
A
14
A
9
A
8
A
13
Q
3
V
CC
N.C
N.C
OE
1
A
19
Q
8
Q
5
Q
4
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