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參數(shù)資料
| 型號： | KM23C4200D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M-Bit (256Kx16) CMOS Mask ROM (EPROM Type)(4M位 (256Kx16) CMOS掩膜ROM) |
| 中文描述： | 4分位（256Kx16）的CMOS掩模ROM（EPROM的形式）（4分位（256Kx16）的CMOS掩膜光盤） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 59K |
| 代理商： | KM23C4200D |
KM23C4200D
CMOS MASK ROM
4M-Bit (256Kx16) CMOS MASK ROM (EPROM TYPE)
GENERAL DESCRIPTION
FEATURES
PIN CONFIGURATION
KM23C4200D
FUNCTIONAL BLOCK DIAGRAM
Pin Name
Pin Function
A
0
- A
17
Address Inputs
Q
0
- Q
15
Data Outputs
CE
Chip Enable
OE
Output Enable
V
CC
Power(+5V)
V
SS
Ground
N.C
No Connection
N.C
CE
Q
15
Q
14
Q
13
Q
12
Q
11
Q
10
Q
8
Q
9
V
SS
Q
7
Q
6
Q
5
Q
4
Q
3
Q
2
Q
1
A
1
A
2
A
3
A
7
A
4
A
5
A
6
DIP
1
2
40
39
3
4
38
37
5
6
36
35
7
8
34
33
10
9
31
32
11
12
30
29
13
14
28
27
15
16
26
25
17
18
24
23
19
22
20
21
Q
0
OE
V
CC
A
17
A
16
A
15
A
14
A
13
A
12
A
11
V
SS
A
10
A
9
A
8
A
0
262,144 x 16 bit organization
Fast access time : 80ns(Max.)
Supply voltage : single +5V
Current consumption
Operating : 50mA(Max.)
Standby : 50
μ
A(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package
-. KM23C4200D : 40-DIP-600
The KM23C4200D is a fully static mask programmable ROM
organized 262,144 x 16 bit. It is fabricated using silicon gate
CMOS process technology.
This device operates with a 5V single power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The KM23C4200D is packaged in a 40-DIP.
A
17
X
AND
DECODER
BUFFERS
A
0
Y
AND
DECODER
BUFFERS
MEMORY CELL
MATRIX
(262,144x16)
SENSE AMP.
CONTROL
LOGIC
BUFFERS
CE
OE
.
.
.
.
.
.
.
.
Q
0
Q
15
. . .
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