參數(shù)資料
型號(hào): KM23V32005BG
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 32M-Bit (4Mx8/2Mx16) COMS MASK ROM
中文描述: 32兆位(4Mx8/2Mx16)COMS衛(wèi)星掩膜ROM
文件頁數(shù): 2/5頁
文件大小: 87K
代理商: KM23V32005BG
KM23V32005BG
CMOS MASK ROM
ABSOLUTE MAXIMUM RATINGS
NOTE
: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should berestricted to the con-
ditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
Item
Symbol
Rating
Unit
Voltage on Any Pin Relative to V
SS
V
IN
-0.3 to +4.5
V
Temperature Under Bias
T
BIAS
-10 to +85
°
C
°
C
Storage Temperature
T
Stg
-55 to +150
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to V
SS
, T
A
=0 to 70
°
C)
Item
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
3.0
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
V
MODE SELECTION
CE
OE
BHE
Q
15
/A
-1
Mode
Data
Power
H
X
X
X
Standby
High-Z
Standby
L
H
X
X
Operating
High-Z
Active
L
L
H
Output
Operating
Q
0
~Q
15
: Dout
Active
L
Input
Operating
Q
0
~Q
7
: Dout
Q
8
~Q
14
: Hi-Z
Active
CAPACITANCE
(T
A
=25
°
C, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Conditions
Min
Max
Unit
Output Capacitance
C
OUT
V
OUT
=0V
-
12
pF
Input Capacitance
C
IN
V
IN
=0V
-
12
pF
DC CHARACTERISTICS
NOTE
: Minimum DC Voltage(V
IL
) is -0.3V an input pins. During transitions, this level may undershoot to -2.0V for periods <20ns.
Maximum DC voltage on input pins(V
IH
) is V
CC
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
Parameter
Symbol
Test Conditions
Min
Max
Unit
Operating Current
I
CC
CE=OE=V
IL
, all outputs open
-
60
mA
Standby Current(TTL)
I
SB1
CE=V
IH
, all outputs open
500
μ
A
μ
A
μ
A
μ
A
Standby Current(CMOS)
I
SB2
CE=V
CC
, all outputs open
30
Input Leakage Current
I
LI
V
IN
=0 to V
CC
-
10
Output Leakage Current
I
LO
V
OUT
=0 to V
CC
-
10
Input High Voltage, All Inputs
V
IH
2.0
V
CC
+0.3
V
Input Low Voltage, All Inputs
V
IL
-0.3
0.6
V
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
V
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
0.4
V
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