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參數(shù)資料
| 型號： | KM29W040AT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x 8 bit NAND Flash Memory |
| 中文描述： | 為512k × 8位NAND快閃記憶體 |
| 文件頁數(shù)： | 10/22頁 |
| 文件大?。?/td> | 359K |
| 代理商： | KM29W040AT |
KM29W040AT, KM29W040AIT
FLASH MEMORY
10
Error in program or erase operation
The device may fail during a program or erase operation.
The following possible failure modes should be considered when implementing a highly reliable system.
KM29W040A Technical Notes
(Continued)
Failure Mode
Detection and Countermeasure sequence
Block
Erase Failure
Read after Erase --> Block Replacement
Frame
Program Failure
Status Read after Program --> Block Replacement
Single Bit
Program Failure
("1" --> "0")
Block Verify after Program --> Block Replacement
Block Replacement
When the error happens in Block "A", try to reprogram the
data into another Block "B" by reloading from an external
buffer. Then, prevent further system access to Block
"A"(by creating a "bad block" table or other appropriate
scheme.)
During Program operation ;
During Erase operation ;
When the error occurs after an erase operation, prevent future accesses to this bad block
(again by creating a table within the system or other appropriate scheme.)
Buffer
memory
error occurs
Block A
Block B
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