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參數(shù)資料
| 型號(hào)： | KM29W040AT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x 8 bit NAND Flash Memory |
| 中文描述： | 為512k × 8位NAND快閃記憶體 |
| 文件頁數(shù)： | 13/22頁 |
| 文件大?。?/td> | 359K |
| 代理商： | KM29W040AT |
KM29W040AT, KM29W040AIT
FLASH MEMORY
13
* Input Data Latch Cycle
CE
CLE
WE
I/O
0
~
7
DIN 0
DIN 1
DIN 31
ALE
t
ALS
t
CLH
t
WC
t
CH
t
DS
t
DH
t
DS
t
DH
t
DS
t
DH
t
WP
t
WH
t
WP
t
WP
* Burst Read Cycle After Frame Access
(CLE=L, WE=H, ALE=L)
RE
CE
R/B
I/O
0
~
7
Dout
Dout
Dout
t
RC
t
RP
t
REA
t
RR
t
RHZ*
t
REA
t
REH
t
REA
t
RHZ*
t
RHZ
≈
≈
≈
NOTES :
Transition is measured
±
200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
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