參數(shù)資料
型號： KM4132G512
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256K x 32Bit x 2 Banks Synchronous Graphic RAM(256K x 32位 x 2組同步圖形 RAM)
中文描述： 256 × 32Bit的× 2銀行同步圖形存儲器（256K × 32位× 2組同步圖形RAM）的
文件頁數(shù)： 5/49頁
文件大小： 934K
代理商： KM4132G512
KM4132G512
CMOS SGRAM
- 6 -
Rev. 2.2 (June 1998)
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C V
IH(min)
/V
IL(max)
=2.0V/0.8V)
Parameter
Symbol
Test Condition
CAS
Latency
Speed
Unit
Note
-6
-7
-8
-10
Operating Current
(One Bank Active)
I
CC1
Burst Length =1
t
RC
≥
t
RC
(min), t
CC
≥
t
CC
(min), I
OL
= 0 mA
230
210
190
170
mA
1
Precharge Standby Current
in power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
2
mA
I
CC2
PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
2
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
35
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
15
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
3
mA
I
CC3
PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
3
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
60
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
40
Operating Current
(Burst Mode)
I
CC4
I
OL
= 0 mA, Page Burst
All bank Activated, t
CCD
= t
CCD
(min)
3
310
280
250
210
mA
1
2
180
180
180
170
Refresh Current
I
CC5
t
RC
≥
t
RC
(min)
150
120
120
110
mA
2
Self Refresh Current
I
CC6
CKE
≤
0.2V
2
mA
3
450
uA
4
Operating Current
(One Bank Block Write)
I
CC7
t
CC
≥
t
CC
(min), I
OL
=0mA, t
BWC
(min)
240
220
190
150
mA
1. Measured with outputs open. Addresses are changed only one time during tcc(min).
2. Refresh period is 32ms. Addresses are changed only one time during tcc(min).
3. KM4132G512-*
4. KM4132G512-G* ; Low Power version
Note :
相關(guān)PDF資料
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