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參數(shù)資料
| 型號： | KM4132G512 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 32Bit x 2 Banks Synchronous Graphic RAM(256K x 32位 x 2組同步圖形 RAM) |
| 中文描述： | 256 × 32Bit的× 2銀行同步圖形存儲器（256K × 32位× 2組同步圖形RAM）的 |
| 文件頁數(shù)： | 16/49頁 |
| 文件大?。?/td> | 934K |
| 代理商： | KM4132G512 |
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KM4132G512
CMOS SGRAM
- 17
Rev. 2.2 (June 1998)
SUMMARY OF 2M Byte SGRAM BASIC FEATURES AND BENEFITS
Features
256K x 32 x 2 SGRAM
Benefits
Interface
Synchronous
Better interaction between memory and system without wait-state of
asynchronous DRAM.
High speed vertical and horizontal drawing.
High operating frequency allows performance gain for SCROLL, FILL,
and BitBLT.
Bank
2 ea
Pseudo-infinite row length by on-chip interleaving operation.
Hidden row activation and precharge.
Page Depth / 1 Row
256 bit
High speed vertical and horizontal drawing.
Total Page Depth
2048 bytes
High speed vertical and horizontal drawing.
Burst Length(Read)
1, 2, 4, 8 Full Page
Programmable burst of 1, 2, ,4, 8 and full page transfer per column
addresses.
Burst Length(Write)
1, 2, 4, 8 Full Page
Programmable burst of 1, 2, ,4, 8 and full page transfer per column
addresses.
BRSW
Switch to burst length of 1 at write without MRS.
Burst Type
Sequential & Interleave
Compatible with Intel and Motorola CPU based system.
CAS Latency
2, 3
Programmable CAS latency.
Block Write
8 Columns
High speed FILL, CLEAR, Text with color registers.
Maximum 32 byte data transfers(e.g. for 8bpp : 32 pixels) with plane and
byte masking functions.
Color Register
1 ea.
A and B bank share.
Mask Register
1 ea.
Write-per-bit capability(bit plane masking). A and B banks share.
Mask function
DQM
0-3
Byte masking(pixel masking for 8bpp system) for data-out/in
Write per bit
Each bit of the mask register directly controls a corresponding bit plane.
Pixel Mask at Block Write
Byte masking(pixel masking for 8bpp system) for color by DQi
相關(guān)PDF資料 |
PDF描述 |
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| KM416C1200B | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C1000B | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1000B | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1200B | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C1200C | 12.4K OHM 1% 1/2W M/F LEADED RESISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM4132G51207 | 制造商:SAMSUNG 功能描述:New |
| KM4132G512Q-10 | 制造商:SEC 功能描述:SGRAM, 2X256KX32, 100 Pin, Plastic, QFP |
| KM4132G512Q-8T | 制造商:Samsung SDI 功能描述: |
| KM4132G512TQ-10 | 制造商:Samsung Electro-Mechanics 功能描述:512K X 32 SYNCHRONOUS GRAPHICS RAM, 7 ns, PQFP100 |
| KM41464A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K X 4 BIT DYNAMIC RAM WITH PAGE MODE |
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