參數(shù)資料
型號(hào)： KM4132G512
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256K x 32Bit x 2 Banks Synchronous Graphic RAM(256K x 32位 x 2組同步圖形 RAM)
中文描述： 256 × 32Bit的× 2銀行同步圖形存儲(chǔ)器（256K × 32位× 2組同步圖形RAM）的
文件頁(yè)數(shù)： 28/49頁(yè)
文件大?。?/td> 934K
代理商： KM4132G512
KM4132G512
CMOS SGRAM
- 29
Rev. 2.2 (June 1998)
1. All input can be don't care when CS is high at the CLK high going edge.
2. Bank active & read/write are controlled by A
10
.
A10
Active & Read/Write
0
Bank A
1
Bank B
A
9
A10
Operation
0
0
Disable auto precharge, leave bank A active at end of burst.
1
Disable auto precharge, leave bank B active at end of burst.
1
0
Enable auto precharge, precharge bank A at end of burst.
1
Enable auto precharge, precharge bank B at end of burst.
A
9
A
10
Precharge
0
0
Bank A
0
1
Bank B
1
X
Both Bank
A
10
DSF
Operation
0
L
Bank A row active, disable write per bit function for bank A
H
Bank A row active, enable write per bit function for bank A
1
L
Bank B row active, disable write per bit function for bank B
H
Bank B row active, enable write per bit function for bank B
DSF
Operation
Minimum cycle time
L
Normal write
t
CCD
t
BWC
H
Block write
3. Enable and disable auto precharge function are controlled by A
9
in read/write command.
4. A
9
and A
10
control bank precharge when precharge command is asserted.
5. Enable and disable Write-per Bit function are controlled by DSF in Row Active command.
6. Block write/normal write is controlled by DSF.
*Note :
相關(guān)PDF資料
PDF描述
KM416C1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
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KM416V1000B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
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KM416C1200C 12.4K OHM 1% 1/2W M/F LEADED RESISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM4132G51207 制造商:SAMSUNG 功能描述:New
KM4132G512Q-10 制造商:SEC 功能描述:SGRAM, 2X256KX32, 100 Pin, Plastic, QFP
KM4132G512Q-8T 制造商:Samsung SDI 功能描述:
KM4132G512TQ-10 制造商:Samsung Electro-Mechanics 功能描述:512K X 32 SYNCHRONOUS GRAPHICS RAM, 7 ns, PQFP100
KM41464A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K X 4 BIT DYNAMIC RAM WITH PAGE MODE
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