參數(shù)資料
型號(hào)： KM4132G512
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256K x 32Bit x 2 Banks Synchronous Graphic RAM(256K x 32位 x 2組同步圖形 RAM)
中文描述： 256 × 32Bit的× 2銀行同步圖形存儲(chǔ)器（256K × 32位× 2組同步圖形RAM）的
文件頁(yè)數(shù)： 9/49頁(yè)
文件大?。?/td> 934K
代理商： KM4132G512
KM4132G512
CMOS SGRAM
- 10
Rev. 2.2 (June 1998)
SGRAM vs SDRAM
If DSF is low, SGRAM functionality is identical to SDRAM functionality
.
SGRAM can be used as an unified memory by the appropriate DSF control
--> SGRAM=Graphic Memory + Main Memory
Function
MRS
Bank Active
Write
DSF
L
H
L
H
L
H
SGRAM
Function
MRS
SMRS
Bank Active
with
Write per bit
Disable
Bank Active
with
Write per bit
Enable
Normal
Write
Block
Write
3. Auto refresh functions as same as CBR refresh of DRAM.
The automatical precharge without Row precharge command is meant by "Auto".
Auto/Self refresh can be issued only at both precharge state.
4. A
10
: Bank select address.
If "Low" at read, (block) write, Row active and precharge, bank A is selected.
If "High" at read, (block) write, Row active and precharge, bank B is selected.
If A
9
is "High" at Row precharge, A
10
is ignored and both banks are selected.
5. It is determined at Row active cycle.
whether Normal/Block write operates in write per bit mode or not.
For A bank write, at A bank Row active, for B bank write, at B bank Row active.
Terminology : Write per bit =I/O mask
(Block) Write with write per bit mode=Masked(Block) Write
6. During burst read or write with auto precharge, new read/(block) write command cannot be issued.
Another bank read/(block) write command can be issued at
t
RP
after the end of burst.
7. Burst stop command is valid only at full page burst length.
8. DQM sampled at positive going edge of a CLK.
masks the data-in at the very CLK(Write DQM latency is 0)
but makes Hi-Z state the data-out of 2 CLK cycles after.(Read DQM latency is 2)
9. Graphic features added to SDRAM
′
s original features.
If DSF is tied to low, graphic functions are disabled and chip operates as a 16M SDRAM with 32 DQ
′
s.
SIMPLIFIED TRUTH TABLE
相關(guān)PDF資料
PDF描述
KM416C1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1000B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416V1000B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416V1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1200C 12.4K OHM 1% 1/2W M/F LEADED RESISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM4132G51207 制造商:SAMSUNG 功能描述:New
KM4132G512Q-10 制造商:SEC 功能描述:SGRAM, 2X256KX32, 100 Pin, Plastic, QFP
KM4132G512Q-8T 制造商:Samsung SDI 功能描述:
KM4132G512TQ-10 制造商:Samsung Electro-Mechanics 功能描述:512K X 32 SYNCHRONOUS GRAPHICS RAM, 7 ns, PQFP100
KM41464A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K X 4 BIT DYNAMIC RAM WITH PAGE MODE
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