- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄373153 > KM4132G271A-10 (SAMSUNG SEMICONDUCTOR CO. LTD.) 128K x 32Bit x 2 Banks Synchronous Graphic RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | KM4132G271A-10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| 中文描述： | 128K的x 32Bit的× 2銀行同步圖形內(nèi)存 |
| 文件頁(yè)數(shù)： | 5/48頁(yè) |
| 文件大?。?/td> | 1000K |
| 代理商： | KM4132G271A-10 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)當(dāng)前第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)
KM4132G271A
CMOS SGRAM
Rev.0 (August 1997)
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
é
V
IH(min)
/V
IL(max)
=2.0V/0.8V)
Parameter
Symbol
Test Condition
CAS
Latency
Speed
Unit
Note
-8
-10
-12
Operating Current
(One Bank Active)
I
CC1
Burst Length =1
t
RC
t
RC
(min), t
CC
t
CC
(min)
I
OL
= 0 mA
CKE
V
IL
(max), t
CC
= 15ns
3
180
160
140
mA
1
2
160
140
120
Precharge Standby Cur-
rent in power-down mode
I
CC2
P
2
2
2
mA
I
CC2
PS
CKE
V
IL
(max), CLK
V
IL
(max), t
CC
=
2
2
2
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
45
45
45
mA
I
CC2
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
20
20
20
Active Standby Current
in power-down mode
I
CC3
P
CKE
V
IL
(max), t
CC
= 15ns
4
4
4
mA
I
CC3
PS
CKE
V
IL
(max), CLK
V
IL
(max), t
CC
=
3.5
3.5
3.5
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
55
55
55
mA
I
CC3
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
35
35
35
Operating Current
(Burst Mode)
I
CC4
I
OL
= 0 mA, Page Burst
All bank Activated, t
CCD
= t
CCD
(min)
3
200
180
160
mA
1, 2
2
180
160
140
Refresh Current
I
CC5
t
RC
t
RC
(min)
3
140
120
100
mA
3
2
130
110
90
Self Refresh Current
I
CC6
CKE
0.2V
1
1
1
mA
Operating Current
(One Bank Block Write)
I
CC7
t
CC
t
CC
(min), I
OL
=0mA, t
BWC
(min)
170
150
130
mA
4
1. Measured with outputs open.
2. Assumes minimum column address update cycle t
CCD
(min).
3. Refresh period is 16ms.
4. Assumes minimum column address update cycle t
BWC
(min).
Note :
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM4132G271A-12 | 128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271A-8 | 128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271A | 128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271BTQ(R)-10 | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BTQ(R)-7 | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM4132G271A-12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271A-8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271AQ-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BQ(R)-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。