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| 型號(hào)： | KM4132G271A-10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| 中文描述： | 128K的x 32Bit的× 2銀行同步圖形內(nèi)存 |
| 文件頁(yè)數(shù)： | 6/48頁(yè) |
| 文件大?。?/td> | 1000K |
| 代理商： | KM4132G271A-10 |
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KM4132G271A
CMOS SGRAM
Rev.0 (August 1997)
AC OPERATING TEST CONDITIONS
(V
DD
= 3.3V
0.3V, T
A
= 0 to 70
é
)
Parameter
Value
AC input levels
V
IH
/V
IL
= 2.4V / 0.4V
Input timing measurement reference level
1.4V
Input rise and fall time(See note 3)
t
R
/
t
F
=1ns/ 1ns
Output timing measurement reference level
1.4V
Output load condition
See Fig. 2
3.3V
1200
§ù
870
§ù
Output
30pF
V
OH
(DC) = 2.4V, I
OH
= -2mA
V
OL
(DC) = 0.4V, I
OL
= 2mA
V
REF
=1.4V
50
§ù
Output
30pF
Z0=50
§ù
(Fig. 2) AC Output Load Circuit
(Fig. 1) DC Output Load Circuit
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
* All AC parameters are measured from half to half.
Parameter
Symbol
-8
-10
-12
Unit
Note
Min
Max
Min
Max
Min
Max
CLK cycle time
CAS Latency=3
t
CC
8
1000
10
1000
12
1000
ns
1
CAS Latency=2
12
13
15
CLK to valid
output delay
CAS Latency=3
t
SAC
-
7
-
7
-
9
ns
1, 2
CAS Latency=2
-
10
-
11
-
12
Output data
hold time
CAS Latency=3
t
OH
3
3
3
ns
2
CAS Latency=2
3
3
3
ns
CLK high pulse width
t
CH
3
3.5
4
ns
3
CLK low pulse width
t
CL
3
3.5
4
ns
3
Input setup time
t
SS
2.5
3
3
ns
3
Input hold time
t
SH
1
1
1.5
ns
3
CLK to output in Low-Z
t
SLZ
1
1
1
ns
2
CLK to output
in Hi-Z
CAS latency=3
t
SHZ
-
7
-
7
-
9
ns
CAS latency=2
-
10
-
11
-
12
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Note :
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|---|---|
| KM4132G271A-12 | 128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271A-8 | 128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271A | 128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271BTQ(R)-10 | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BTQ(R)-7 | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM4132G271A-12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271A-8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271AQ-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32Bit x 2 Banks Synchronous Graphic RAM |
| KM4132G271B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BQ(R)-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
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