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參數(shù)資料
| 型號： | KM4132G271BTQ(R)-8 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| 中文描述： | 128K的x 32位× 2銀行同步圖形RAM的LVTTL |
| 文件頁數(shù)： | 7/51頁 |
| 文件大小： | 1033K |
| 代理商： | KM4132G271BTQ(R)-8 |
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KM4132G271B
CMOS SGRAM
- 7 -
Rev. 2.4 (May 1998)
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C V
IH(min)
/V
IL(max)
=2.0V/0.8V)
Parameter
Symbol
Test Condition
CAS
Latency
Speed
Unit
Note
-7
-8
-10
Operating Current
(One Bank Active)
I
CC1
Burst Length =1
t
RC
≥
t
RC
(min), t
CC
≥
t
CC
(min), I
OL
= 0 mA
180
160
150
mA
1
Precharge Standby Current
in power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
2
mA
I
CC2
PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
2
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
35
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
15
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
3
mA
I
CC3
PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
3
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
50
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
25
Operating Current
(Burst Mode)
I
CC4
I
OL
= 0 mA, Page Burst
All bank Activated, t
CCD
= t
CCD
(min)
3
300
280
210
mA
1
2
180
180
160
Refresh Current
I
CC5
t
RC
≥
t
RC
(min)
90
90
90
mA
2
Self Refresh Current
I
CC6
CKE
≤
0.2V
2
mA
Operating Current
(One Bank Block Write)
I
CC7
t
CC
≥
t
CC
(min), I
OL
=0mA, t
BWC
(min)
210
190
150
mA
Note :
1. Measured with outputs open. Addresses are changed only one time during tcc(min).
2. Refresh period is 32ms. Addresses are changed only one time during tcc(min).
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| KM4132G271B | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
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| KM4132G271BQ(R)-7 | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM4132G271BTQR-8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271Q10 | 制造商:SAMSUNG 功能描述:* |
| KM4132G51207 | 制造商:SAMSUNG 功能描述:New |
| KM4132G512Q-10 | 制造商:SEC 功能描述:SGRAM, 2X256KX32, 100 Pin, Plastic, QFP |
| KM4132G512Q-8T | 制造商:Samsung SDI 功能描述: |
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