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參數(shù)資料
| 型號(hào)： | KM416V1000B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 100萬(wàn)× 16的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的快速頁(yè)面模式 |
| 文件頁(yè)數(shù)： | 8/8頁(yè) |
| 文件大小： | 84K |
| 代理商： | KM416V1000B |
KM416C1000B, KM416C1200B
KM416V1000B, KM416V1200B
CMOS DRAM
t
ASC
,
t
CAH
are referenced to the earlier CAS rising edge.
t
CP
is specified from the last CAS rising edge in the previous cycle to the first CAS falling edge in the next cycle.
t
CWD
is referenced to the later CAS falling edge at word read-modify-write cycle.
t
CWL
is specified from W falling edge to the earlier CAS rising edge.
t
CSR
is referenced to earlier CAS falling low before RAS transition low.
t
CHR
is referenced to the later CAS rising high after RAS transition low.
t
CSR
t
CHR
RAS
LCAS
UCAS
16.
15.
14.
11.
13.
12.
17.
t
DS,
t
DH
is independently specified for lower byte D
IN
(0-7), upper byte D
IN
(8-15)
4096(4K Ref.)/1024(1K Ref.) of burst refresh must be executed within 16ms before and after self-refresh in order to meet
refresh specification (L-version).
10.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416V1200B | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C1200C | 12.4K OHM 1% 1/2W M/F LEADED RESISTOR |
| KM416C1000C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1000C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1200C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416V1000BT-L6 | 制造商:Samsung Semiconductor 功能描述: |
| KM416V1000C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1004A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| KM416V1004A-6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| KM416V1004A-7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
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