參數(shù)資料
型號(hào)： UPD488448FB-C80-45-DQ1
廠商： NEC Corp.
英文描述： 128 M-bit Direct Rambus⑩ DRAM
中文描述： 128 M位DRAM的直接Rambus的⑩
文件頁數(shù)： 68/80頁
文件大?。?/td> 1902K
代理商： UPD488448FB-C80-45-DQ1
Data Sheet M14837EJ3V0DS00
68
μ
PD488448 for Rev. P
37. Absolute Maximum Ratings
Absolute Maximum Ratings
Symbol
Parameter
MIN.
MAX.
Unit
V
I,ABS
Voltage applied to any RSL or CMOS pin with respect to GND
–0.3
V
DD
+0.3
V
V
DD,ABS
,V
DDa,ABS
Voltage on V
DD
and V
DDa
with respect to GND
–0.5
V
DD
+1.0
V
T
STORE
Storage temperature
–50
+100
°
C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
38. I
DD
- Supply Current Profile
I
DD
- Supply Current Profile
I
DD
value
RDRAM blocks consuming power
@ t
CYCLE
Note 1
MIN.
MAX.
Unit
I
DD,PDN
Self-refresh only for INIT.LSR=0
3.0
mA
I
DD,NAP
T/RCLK-Nap
4.2
mA
I
DD,STBY
T/RCLK,ROW-demux
2.50 ns
110
mA
2.81 ns
105
3.33 ns
95
3.83 ns
85
I
DD,ATTN
T/RCLK, ROW-demux, COL-demux
2.50 ns
180
mA
2.81 ns
165
3.33 ns
145
3.83 ns
135
I
DD,ATTN-W
T/RCLK, ROW-demux, COL-demux,
2.50 ns
650
mA
DQ-demux, 1
WR-SenseAmp, 4
ACT-Bank
2.81 ns
595
3.33 ns
515
3.83 ns
470
I
DD,ATTN-R
T/RCLK, ROW-demux, COL-demux,
2.50 ns
690
mA
DQ-mux, 1
RD-SenseAmp, 4
ACT-Bank
Note 2
2.81 ns
625
3.33 ns
540
3.83 ns
480
Notes 1.
The CMOS interface consumes power in all power states.
2.
This does not include the I
OL
sink current. The RDRAM dissipates I
OL
V
OL
in each output driver when a logic
one is driven.
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