| 型號(hào) | 廠商 | 描述 |
| irf7495pbf 2 3 4 5 6 7 8 |
International Rectifier | HEXFET㈢Power MOSFET |
| irf7495 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Power MOSFET |
| irf7503pbf 2 3 4 5 6 7 8 |
International Rectifier | HEXFET㈢ Power MOSFET |
| irf7521d1 2 3 4 5 6 7 8 |
International Rectifier | FETKY⑩ MOSFET / Schottky Diode(Vdss=20V, Rds(on)=0.135ohm, Schottky Vf=0.39V) |
| irf7524d1 2 3 4 5 6 7 8 |
International Rectifier | Co-packaged HEXFET Power MOSFET and Schottky Diode(同封裝 HEXFET晶體管和肖特基二極管) |
| irf7534d1 2 3 4 5 6 7 8 |
International Rectifier | Co-packaged HEXFET Power MOSFET and Schottky Diode(同封裝 HEXFET晶體管和肖特基二極管) |
| irf7555 2 3 4 5 6 7 |
International Rectifier | HEXFET Power MOSFET(HEXFET 功率 MOS場(chǎng)效應(yīng)管) |
| irf7726 2 3 4 5 6 7 8 9 |
International Rectifier | Power MOSFET(Vdss=-30V) |
| irf7751 2 3 4 5 6 7 8 |
International Rectifier | RES 8K-OHM 1% 0.125W 100PPM THICK-FILM SMD-0805 5K/REEL-7IN-PA |
| irf7752 2 3 4 5 6 7 |
International Rectifier | Dual N-Channel MOSFET(雙 N溝道 MOS場(chǎng)效應(yīng)管) |
| irf7754 2 3 4 5 6 7 8 9 |
International Rectifier | Power MOSFET(Vdss=-12V) |
| irf7755 2 3 4 5 6 7 8 |
International Rectifier | -20V,P-Channel HEXFET Power MOSFET(-20V,P溝道 HEXFET功率MOS場(chǎng)效應(yīng)管) |
| irf7757 2 3 4 5 6 7 8 9 |
International Rectifier | Power MOSFET(Vdss=20V) |
| irf7910 2 3 4 5 6 7 8 |
International Rectifier | HEXFET Power MOSFET |
| irf840a 2 3 4 5 6 7 8 |
International Rectifier | SMPS MOSFET(開(kāi)關(guān)模式電源MOS場(chǎng)效應(yīng)管) |
| irf840s 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) |
| irf840strr 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) |
| irf841 2 3 4 5 6 7 8 |
International Rectifier | TRANSISTORS N-CHANNEL |
| irf841 2 3 4 5 6 7 8 |
SAMSUNG SEMICONDUCTOR CO. LTD. | RES 100K-OHM 1% 0.25W 100PPM THICK-FILM SMD-1206 5K/REEL-7IN-PA |
| irf842 2 3 4 5 6 7 8 |
International Rectifier | TRANSISTORS N-CHANNEL |
| irf843 2 3 4 5 6 7 8 |
International Rectifier | RES 1M-OHM 5% 0.25W 200PPM THICK-FILM SMD-1206 5K/REEL-7IN-PA |
| irf841 2 3 4 5 6 7 8 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Power MOSFETs, 8A, 450 V/500V |
| irf842 2 3 4 5 6 7 8 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 8A, 450 V/500V |
| irf843 2 3 4 5 6 7 8 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 8A, 450 V/500V |
| irf9140 2 3 4 5 6 7 |
International Rectifier | -100V,Thru-Hole Radiation Hardened Power MOSFET(-100V,通孔安裝抗輻射功率P溝道MOSFET) |
| irf9540s 2 3 4 5 6 |
International Rectifier | HEXFET Power MOSFET |
| irf9z34l 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A) |
| irf9z34s 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A) |
| irf9z34nl 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) |
| irf9z34ns 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) |
| irf9z34n 2 3 4 5 6 7 8 |
International Rectifier | P-Channel HEXFET Power MOSFET(P溝道 HEXFET 功率MOS場(chǎng)效應(yīng)管) |
| irfac30 2 3 4 5 6 7 |
International Rectifier | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) |
| irfae30 2 3 4 5 6 7 |
International Rectifier | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) |
| irfae50 2 3 4 5 6 7 |
International Rectifier | HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) |
| irfb260 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A) |
| irfb260n 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A) |
| irfb41n15d 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A) |
| irfs41n15d 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A) |
| irfsl41n15d 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A) |
| irfb42n20d 2 3 4 5 6 |
International Rectifier | High frequency DC-DC converters |
| irfs42n20d 2 3 4 5 6 |
International Rectifier | High frequency DC-DC converters |
| irfsl42n20d 2 3 4 5 6 |
International Rectifier | High frequency DC-DC converters |
| irfb9n30a 2 3 4 5 6 7 8 |
International Rectifier | N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場(chǎng)效應(yīng)管) |
| irfba31n50l 2 3 |
International Rectifier | SMPS MOSFET(開(kāi)關(guān)模式電源MOS場(chǎng)效應(yīng)管) |
| irfba34n50c 2 3 |
International Rectifier | SMPS MOSFET(開(kāi)關(guān)模式電源MOS場(chǎng)效應(yīng)管) |
| irfba35n60c 2 3 |
International Rectifier | SMPS MOSFET(開(kāi)關(guān)模式電源MOS場(chǎng)效應(yīng)管) |
| irfbe20 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A) |
| irfbl10n60a 2 3 4 5 6 7 8 |
International Rectifier | N-Channel SMPS MOSFET(N溝道 開(kāi)關(guān)模式電源MOS場(chǎng)效應(yīng)管,用于高頻率DC-DC轉(zhuǎn)換器) |
| irfd210 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A) |
| irfd210 2 3 4 5 6 |
HARRIS SEMICONDUCTOR | 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET |