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參數(shù)資料
| 型號： | IRFBA34N50C |
| 廠商： | International Rectifier |
| 英文描述： | SMPS MOSFET(開關(guān)模式電源MOS場效應(yīng)管) |
| 中文描述： | MOSFET的開關(guān)電源（開關(guān)模式電源馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 53K |
| 代理商： | IRFBA34N50C |
IRFBA34N50C
2
www.irf.com
PROVISIONAL
Symbol
I
S
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 24A, V
GS
= 0V
T
J
= 125°C, I
F
= 20A
di/dt = 100A/μs
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
510
11
1.5
770
17
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
S
D
G
Diode Characteristics
40
160
A
Symbol
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Parameter
Min. Typ. Max. Units
500
–––
–––
0.68
–––
0.070 0.075
3.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 24A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Drain-to-Source Breakdown Voltage
–––
–––
V
V/°C
V
5.5
25
250
100
-100
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Dynamic @ T
J
= 25°C (unless otherwise specified)
nA
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 0.83mH, R
G
= 25
,
I
AS
= 34A,
I
SD
≤
20A, di/dt
≤
42A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
Symbol
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Min. Typ. Max. Units
20
–––
–––
190
–––
45
–––
90
–––
23
–––
29
–––
55
–––
6.3
–––
6330
–––
3600
–––
140
–––
15150 –––
–––
140
–––
460
Conditions
V
DS
= 50V, I
D
= 20A
I
D
= 20A
V
DS
= 400V
V
GS
= 10V,
V
DD
= 250V
I
D
= 20A
R
G
= 1.3
V
GS
= 10V,
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 400V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 400V
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
pF
–––
–––
ns
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