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參數(shù)資料
| 型號(hào)： | IRF9140 |
| 廠商： | International Rectifier |
| 英文描述： | -100V,Thru-Hole Radiation Hardened Power MOSFET(-100V,通孔安裝抗輻射功率P溝道MOSFET) |
| 中文描述： | - 100V的，通孔抗輻射功率MOSFET（- 100V的，通孔安裝抗輻射功率P溝道MOSFET的） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 160K |
| 代理商： | IRF9140 |
IRF9140
2
www.irf.com
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
Min Typ Max
—
—
—
—
30
Soldered to a 2” square copper-clad board
Units
Test Conditions
1.0
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
-18
-72
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
170
—
-4.2
280
3.6
V
nS
μC
T
j
= 25°C, IS =-18A, VGS = 0V
Tj = 25°C, IF = -18A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Min
-100
—
Typ
—
-0.087
Max Units
—
—
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
-2.0
—
— 0.23
VGS =-10V, ID = -18A
—
-4.0
V
0.2
VGS = -10V, ID = -11A
VGS(th)
VDS = VGS, ID = -250
μ
A
gfs
IDSS
Forward Transconductance
Zero Gate Voltage Drain Current
6.2
—
—
—
—
—
—
-25
-250
S (
)
VDS > -15V, IDS = -11A
VDS= -80V, VGS=0V
VDS = -80V
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-10V, ID = -18A
VDS= -50V
μA
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
31
3.7
7.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
60
13
35.2
35
85
85
65
—
nA
nC
VDD = -50V, ID = -18A,
RG =9.1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1400
600
200
VGS = 0V, VDS = -25V
f = 1.0MHz
—
—
pF
nH
ns
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
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