參數(shù)資料
型號: IRF9Z34NS
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
中文描述: 功率MOSFET(減振鋼板基本\u003d- 55V的,的Rds(on)\u003d 0.10ohm,身份證\u003d- 19A條)
文件頁數(shù): 4/10頁
文件大?。?/td> 162K
代理商: IRF9Z34NS
IRF9Z34NS/L
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
4
8
12
16
20
0
10
20
30
40
G
A
-
Q , Total Gate Charge (nC)
FOR TEST CIRCUIT
SEE FIGURE 13
I = -10A
V = -44V
V = -28V
0.1
1
10
100
0.2
0.4
-V , Source-to-Drain Voltage (V)
0.6
0.8
1.0
1.2
1.4
1.6
T = 25°C
V = 0V
S
A
-
T = 175°C
1
10
100
1000
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10ms
A
-
-V , Drain-to-Source Voltage (V)
D
10μs
100μs
1ms
T = 25°C
T = 175°C
Single Pulse
0
200
400
600
800
1000
1200
1
10
100
C
A
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
iss
C
oss
C
rss
相關(guān)PDF資料
PDF描述
IRF9Z34N P-Channel HEXFET Power MOSFET(P溝道 HEXFET 功率MOS場效應(yīng)管)
IRFAC30 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
IRFAE30 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
IRFAE50 HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
IRFB260 Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF9Z34NSPBF 功能描述:MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF9Z34NSTRL 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 19A 3-Pin(2+Tab) D2PAK T/R
IRF9Z34NSTRLPBF 功能描述:MOSFET MOSFT PCh -55V 19A 100mOhm 23.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF9Z34NSTRR 功能描述:MOSFET P-CH 55V 19A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF9Z34NSTRRPBF 功能描述:MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube