參數(shù)資料
型號： IRF7910
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/8頁
文件大?。?/td> 122K
代理商： IRF7910
IRF7910
2
www.irf.com
Symbol
I
S
Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 8.0A, V
GS
= 0V
T
J
= 125
°
C, I
S
= 8.0A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 8.0A, V
R
=12V
di/dt = 100A/μs
T
J
= 125
°
C, I
F
= 8.0A, V
R
=12V
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
–––
–––
–––
–––
–––
–––
0.85
0.70
50
60
51
60
1.3
–––
75
90
77
90
V
t
rr
Q
rr
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
ns
nC
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
g
fs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
Q
oss
Output Gate Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
ns
Symbol
E
AS
I
AR
Parameter
Typ.
–––
–––
Max.
100
8.0
Units
mJ
A
Single Pulse Avalanche Energy
Avalanche Current
Avalanche Characteristics
S
D
G
Diode Characteristics
1.8
79
Min. Typ. Max. Units
18
–––
–––
17 26 I
D
= 8.0A
–––
4.4
–––
–––
5.2
–––
–––
16
–––
–––
9.4
–––
–––
22
–––
–––
16
–––
–––
6.3
–––
–––
1730
–––
–––
1340
–––
–––
330
–––
Conditions
V
DS
= 6.0V, I
D
= 8.0A
–––
S
nC
V
DS
= 6.0V
V
GS
= 4.5V
V
GS
= 0V, V
DS
= 10V
V
DD
= 6.0V
I
D
= 8.0A
R
G
= 1.8
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 6.0V
= 1.0MHz
pF
V
SD
Diode Forward Voltage
Static @ T
J
= 25
°
C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
m
Symbol
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Parameter
Min. Typ. Max. Units
12
–––
–––
0.01
–––
11.5
–––
20
0.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 8.0A
V
GS
= 2.8V, I
D
= 5.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 9.6V, V
GS
= 0V
V
DS
= 9.6V, V
GS
= 0V, T
J
= 125
°
C
V
GS
= 12V
V
GS
= -12V
Drain-to-Source Breakdown Voltage
–––
–––
15
50
2.0
100
250
200
-200
V
V/
°
C
V
GS(th)
Gate Threshold Voltage
V
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
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