參數(shù)資料
型號(hào)： IRFB9N30A
廠商： International Rectifier
英文描述： N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場(chǎng)效應(yīng)管)
中文描述： N溝道HEXFET功率MOSFET的（不適用溝道的HEXFET功率馬鞍山場(chǎng)效應(yīng)管）
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 137K
代理商： IRFB9N30A
IRFB9N30A
2
www.irf.com
Parameter
Min. Typ. Max. Units
300
–––
–––
0.38
–––
–––
2.0
–––
6.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
–––
25
–––
35
–––
29
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 5.6A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 5.6A
V
DS
= 300V, V
GS
= 0V
V
DS
= 240V, V
GS
= 0V, T
J
= 125°C
V
GS
= 30V
V
GS
= -30V
I
D
= 9.3A
V
DS
= 240V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 150V
I
D
= 9.3A
R
G
= 12
R
D
= 16
,See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 240V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 240V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
0.45
4.0
–––
25
250
100
-100
33
6.9
12
–––
–––
–––
–––
V
V/°C
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
920
160
8.7
1200
52
102
–––
–––
–––
–––
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 3.7mH
R
G
= 25
, I
AS
= 9.3A. (See Figure 12)
I
SD
≤
9.3A, di/dt
≤
270A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 9.3A, V
GS
= 0V
T
J
= 25°C, I
F
= 9.3A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
280
1.5
1.5
420
2.3
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
9.3
37
A
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
相關(guān)PDF資料
PDF描述
IRFBA31N50L SMPS MOSFET(開(kāi)關(guān)模式電源MOS場(chǎng)效應(yīng)管)
IRFBA34N50C SMPS MOSFET(開(kāi)關(guān)模式電源MOS場(chǎng)效應(yīng)管)
IRFBA35N60C SMPS MOSFET(開(kāi)關(guān)模式電源MOS場(chǎng)效應(yīng)管)
IRFBE20 Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A)
IRFBL10N60A N-Channel SMPS MOSFET(N溝道 開(kāi)關(guān)模式電源MOS場(chǎng)效應(yīng)管,用于高頻率DC-DC轉(zhuǎn)換器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFB9N30APBF 功能描述:MOSFET N-Chan 300V 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFB9N60 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)
IRFB9N60A 功能描述:MOSFET N-Chan 600V 9.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFB9N60APBF 功能描述:MOSFET N-Chan 600V 9.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFB9N65 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*