參數(shù)資料
型號： IRFB260
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）最大值\u003d 0.040ohm，身份證\u003d 56A條）
文件頁數(shù)： 8/8頁
文件大?。?/td> 90K
代理商： IRFB260
IRFB260N
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
8
www.irf.com
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X
0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X
1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
N OTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREM ENTS DO NO T INCLUDE BURRS.
TO-220AB Part Marking Information
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR
’
s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
08/01
LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
EXAMPLE: THIS IS AN IRF1010
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25
°
C, L = 0.78mH
R
G
= 25
, I
AS
= 34A.
I
SD
≤
34, di/dt
≤
480A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175
°
C
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging
time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
相關PDF資料
PDF描述
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相關代理商/技術參數(shù)
參數(shù)描述
IRFB260N 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A)
IRFB260NPBF 功能描述:MOSFET MOSFT 200V 56A 40mOhm 150nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFB3004GPBF 功能描述:MOSFET MOSFT 40V 195A 1.7 mOhm 160nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFB3004PBF 功能描述:MOSFET MOSFT 40V 195A 1.7mOhm 160nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFB3004PBF 制造商:International Rectifier 功能描述:MOSFET N CH 40V 195A TO220AB 制造商:International Rectifier 功能描述:MOSFET, N CH, 40V, 195A, TO220AB 制造商:International Rectifier 功能描述:MOSFET, N CH, 40V, 195A, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes
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