參數(shù)資料
型號： IRFB260
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）最大值\u003d 0.040ohm，身份證\u003d 56A條）
文件頁數(shù)： 2/8頁
文件大?。?/td> 90K
代理商： IRFB260
IRFB260N
2
www.irf.com
Parameter
Min. Typ. Max. Units
29
–––
–––
150
–––
24
–––
67
–––
17
–––
64
–––
52
–––
50
–––
4220
–––
–––
580
–––
140
–––
5080
–––
–––
230
–––
500
Conditions
V
DS
= 50V, I
D
= 34A
I
D
= 34A
V
DS
= 160V
V
GS
= 10V
V
DD
= 100V
I
D
= 34A
R
G
= 1.8
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V,
= 1.0MHz
V
GS
= 0V, V
DS
= 160V,
= 1.0MHz
V
GS
= 0V, V
DS
= 0V to 160V
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
220
37
100
–––
–––
–––
–––
S
nC
–––
–––
pF
–––
–––
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter
Typ.
–––
–––
–––
Max.
450
34
38
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 34A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 34A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
240
2.1
1.3
360
3.2
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
56
220
A
Static @ T
J
= 25
°
C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
–––
0.26
–––
V/
°
C Reference to 25
°
C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
V
GS(th)
Gate Threshold Voltage
2.0
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Min. Typ. Max. Units
200
–––
Conditions
V
GS
= 0V, I
D
= 250μA
–––
V
–––
0.040
–––
–––
–––
–––
–––
V
V
GS
= 10V, I
D
= 34A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, V
GS
= 0V, T
J
= 150
°
C
V
GS
= 20V
V
GS
= -20V
4.0
25
250
100
-100
μA
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
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相關代理商/技術參數(shù)
參數(shù)描述
IRFB260N 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A)
IRFB260NPBF 功能描述:MOSFET MOSFT 200V 56A 40mOhm 150nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFB3004GPBF 功能描述:MOSFET MOSFT 40V 195A 1.7 mOhm 160nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFB3004PBF 功能描述:MOSFET MOSFT 40V 195A 1.7mOhm 160nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFB3004PBF 制造商:International Rectifier 功能描述:MOSFET N CH 40V 195A TO220AB 制造商:International Rectifier 功能描述:MOSFET, N CH, 40V, 195A, TO220AB 制造商:International Rectifier 功能描述:MOSFET, N CH, 40V, 195A, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes
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