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參數(shù)資料
| 型號： | IRF7726 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-30V) |
| 中文描述： | 功率MOSFET（30V的減振鋼板基本\u003d-） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 95K |
| 代理商： | IRF7726 |
IRF7726
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= -1.8A, V
GS
= 0V
T
J
= 25
°
C, I
F
= -1.8A
di/dt = -100A/μs
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
35
32
-1.2
53
48
V
ns
μ
C
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
-28
-1.8
A
Parameter
Min. Typ. Max. Units
-30
–––
–––
0.016
–––
–––
–––
0.026
–––
–––
0.040
-1.0
–––
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
46
–––
8.0
–––
8.1
–––
15
–––
25
–––
227
–––
107
–––
2204
–––
–––
341
–––
220
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= -250μA
Reference to 25
°
C, I
D
= -1mA
V
GS
= -10V, I
D
= -7.0A
V
GS
= -4.5V, I
D
= -6.0A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -10V, I
D
= -7.0A
V
DS
= -24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V, T
J
= 70
°
C
V
GS
= -20V
V
GS
= 20V
I
D
= -7.0A
V
DS
= -15V
V
GS
= -10V
V
DD
= -15V, V
GS
= -10V
I
D
= -1.0A
R
G
= 6.0
R
D
= 15
V
GS
= 0V
V
DS
= -25V
= 1.0MHz
V/
°
C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
-2.5
–––
-15
-25
-100
100
69
–––
–––
23
38
341
161
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
μA
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
2%.
S
D
G
When mounted on 1 inch square copper board, t < 10 sec.
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