| 型號 | 廠商 | 描述 |
| bsd-1293-941bx |
0% to 100% Intensity Adjustable, Edison Screw Base Darkroom/Safelight LED Lamps | |
| bsd22 2 3 4 5 6 |
NXP SEMICONDUCTORS | MOSFET N-channel depletion switching transistor(N溝道耗盡型開關(guān)MOS場效應(yīng)管) |
| bsh101 2 3 4 5 6 7 8 9 10 11 12 |
NXP SEMICONDUCTORS | N-channel enhancement mode MOS transistor |
| bsh120t 2 3 4 5 6 7 8 9 10 11 12 13 |
Automotive Rectifier Diodes | |
| bsh204 2 3 4 5 |
Automotive Rectifier Diodes | |
| bsk-1 2 |
Automotive Rectifier Diodes | |
| bsm05gd100d 2 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 5A I(C) | |
| bsm100gal100d 2 3 4 5 6 7 8 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 100A I(C) | |
| bsm100gb170dlc 2 3 4 5 6 7 8 |
IGBT Module | |
| bsm100gb60dlc 2 3 4 5 6 7 8 |
IGBT Module | |
| bsm100gd120dn2v2 2 3 4 5 6 7 8 |
IGBT Module | |
| bsm100gd60dlc 2 3 4 5 6 7 8 |
IGBT Module | |
| bsm10gd100d 2 3 4 5 6 7 8 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 10A I(C) | |
| bsm10gd120dn2 2 3 4 5 6 7 8 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 15A I(C) | |
| bsm10gd120dn2e3224 2 3 4 5 6 7 8 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 15A I(C) | |
| bsm10gp1202 2 3 4 5 6 7 8 |
IGBT Module | |
| bsm200ga120dn2s 2 3 4 5 6 7 8 |
High Efficient Rectifier Diodes | |
| bsm200ga170dn2s 2 3 4 5 6 7 8 |
High Efficient Rectifier Diodes | |
| bsm100gb100d 2 3 4 5 6 7 8 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 100A I(C) | |
| bsm100gb120d 2 3 4 5 6 7 8 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) | |
| bsm100gb120dlck 2 3 4 5 6 7 8 |
Avalanche Rectifier Diodes | |
| bsm100gb160d 2 3 4 5 6 7 8 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.6KV V(BR)CES | 135A I(C) | |
| bsm20gd60dn2e3224 2 3 4 5 6 7 8 |
High Efficient Rectifier Diodes | |
| bsm30gd60dn2e3224 2 3 4 5 6 7 8 |
High Efficient Rectifier Diodes | |
| bsm35gd120dn2 2 3 4 5 6 7 8 |
High Efficient Rectifier Diodes | |
| bsm400ga120dn2s 2 3 4 5 6 7 8 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 550A I(C) | |
| bsm10gp60 2 3 4 5 6 7 8 |
INFINEON TECHNOLOGIES AG | IGBT-Module |
| bsm10gp602 2 3 4 5 6 7 8 |
EUPEC | IGBT Module |
| bsm141 2 3 4 5 6 |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 400V V(BR)DSS | 60A I(D) | |
| bsm150gal100d 2 3 4 5 6 7 8 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C) | |
| bsm151fr 2 3 4 5 6 7 8 |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 56A I(D) | |
| bsm151r 2 3 4 5 6 7 8 |
Avalanche Fast Recovery Rectifier Diodes | |
| bsm15gd100d 2 3 4 5 6 7 8 |
Avalanche Fast Recovery Rectifier Diodes | |
| bsm15gd120d 2 3 4 5 6 7 8 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 15A I(C) | |
| bsm15gp602 2 3 4 5 6 7 8 |
IGBT Module | |
| bsm150gal120dlc 2 3 4 5 6 7 8 |
IGBT Module | |
| bsm150gb100d 2 3 4 5 6 7 8 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C) | |
| bsm150gb120d 2 3 4 5 6 7 8 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C) | |
| bsm150gb160d 2 3 4 5 6 7 8 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.6KV V(BR)CES | 200A I(C) | |
| bsm150gb170dlc 2 3 4 5 6 7 8 |
IGBT Module | |
| bsm150gd60dlc 2 3 4 5 6 7 8 |
IGBT Module | |
| bsm150gxl120dn2 2 3 4 5 6 7 8 |
IGBT Module | |
| bsm150gxr120dn2 2 3 4 5 6 7 8 |
IGBT Module | |
| bsm151(c) 2 3 4 5 6 7 8 |
Avalanche Fast Recovery Rectifier Diodes | |
| bsm151f(c) 2 3 4 5 6 7 8 |
Avalanche Fast Recovery Rectifier Diodes | |
| bsm15gp120 2 3 4 5 6 7 8 |
INFINEON TECHNOLOGIES AG | IGBT-Modules |
| bsm204a |
High Efficient Rectifier Diodes | |
| bsm200ga100d |
High Efficient Rectifier Diodes | |
| bsm200ga120d |
High Efficient Rectifier Diodes | |
| bsm200ga120dn2 |
High Efficient Rectifier Diodes |