- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369499 > BSH120T Automotive Rectifier Diodes PDF資料下載
參數(shù)資料
| 型號： | BSH120T |
| 英文描述： | Automotive Rectifier Diodes |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 2.2AI（四）|到92 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 357K |
| 代理商： | BSH120T |
Philips Semiconductors
BSH120T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 06 September 2000
6 of 13
9397 750 07451
Philips Electronics N.V. 2000. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
×
R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain source on-state resistance
factor as a function of junction temperature.
03ad12
0
1
2
3
4
5
6
7
8
9
10
0
0.5
1
1.5
2
V
DS
(V)
I
D
(A)
3V
3.2V
3.4V
4.6V
3.6V
3.8V
4V
4.2V
4.4V
5V
10V
VGS=20V
03ad14
0
1
2
3
4
5
6
7
8
9
10
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
(V)
5
5.5
I
D
(A)
V
DS
> I
D
X R
DSon
T
j
= 25oC
150oC
03ad13
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
1
2
3
4
5
6
7
8
9
10
I
D
(A)
R
DSon
(
)
T
j
= 25oC
4.6V
V
GS
= 10V
4.4V
4.2V
4V
3.8V
3.6V
3.4V
3.2V
3V
03aa27
0
-60
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-20
20
60
100
140
180
Tj (oC)
a
a
R
DSon 25 C
°
)
---------------------------
=
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BSH204 | Automotive Rectifier Diodes |
| BSK-1 | Automotive Rectifier Diodes |
| BSM05GD100D | TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 5A I(C) |
| BSM100GAL100D | TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 100A I(C) |
| BSM100GB170DLC | IGBT Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSH121 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| BSH121 /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSH121,135 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSH121135 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 55V 300MA SOT323 |
| BSH14-D | 功能描述:端子 Butt Splice, Heat Shrink, 16-14 AWG RoHS:否 制造商:AVX 產(chǎn)品:Junction Box - Wire to Wire 系列:9826 線規(guī):26-18 接線柱/接頭大小: 絕緣: 顏色:Red 型式:Female 觸點電鍍:Tin over Nickel 觸點材料:Beryllium Copper, Phosphor Bronze 端接類型:Crimp |
發(fā)布緊急采購，3分鐘左右您將得到回復。