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參數(shù)資料
| 型號： | BSH120T |
| 英文描述： | Automotive Rectifier Diodes |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 2.2AI（四）|到92 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 357K |
| 代理商： | BSH120T |
Philips Semiconductors
BSH120T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 06 September 2000
5 of 13
9397 750 07451
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 10
μ
A; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 150
°
C
T
j
=
55
°
C
V
DS
= 24 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 2.2 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
= 4.5 V; I
D
= 1 A;
Figure 7
and
8
30
27
45
V
V
V
GS(th)
gate-source threshold voltage
1
0.6
2
2.8
3.2
V
V
V
I
DSS
drain-source leakage current
10
0.6
10
100
10
100
nA
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
80
120
100
170
200
m
m
m
Dynamic characteristics
g
fs
forward transconductance
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
turn-on rise time
t
d(off)
turn-off delay time
t
f
turn-off fall time
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 1.25 A; V
GS
= 0 V;
Figure 13
t
rr
reverse recovery time
Q
r
recovered charge
V
DS
= 20 V; I
D
= 2.2 A;
Figure 11
I
D
= 2.3 A; V
DS
= 15 V; V
GS
= 10 V;
Figure 14
2
4
6.6
1
2.1
250
88
54
2.2
12.3
40
31
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz;
Figure 12
V
DD
= 20 V; R
D
= 18
; V
GS
= 10 V; R
G
= 6
0.82
69
55
1.2
V
ns
nC
I
S
= 1.25 A; dI
S
/dt =
100 A/
μ
s;
V
GS
= 0 V; V
DS
= 30 V
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