參數(shù)資料
型號: BSH120T
英文描述: Automotive Rectifier Diodes
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直| 2.2AI(四)|到92
文件頁數(shù): 1/13頁
文件大?。?/td> 357K
代理商: BSH120T
BSH120T
N-channel enhancement mode field-effect transistor
Rev. 01 — 06 September 2000
Product specification
c
c
M3D186
1.
Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS
1
technology.
Product availability:
BSH120T in SOT54 (TO-92).
2.
Features
I
TrenchMOS technology
I
Low on-state resistance
I
Very fast switching
I
Logic level compatible.
3.
Applications
I
Relay drivers
I
DC to DC converters
I
Logic level translators.
4.
Pinning information
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pin
Pinning - SOT54, simplified outline and symbol
Description
Simplified outline
Symbol
1
source (s)
SOT54 (TO-92)
2
drain (d)
3
gate (g)
3 2 1
03ab40
s
d
g
MBB076
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BSH121 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor
BSH121 /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BSH121,135 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BSH121135 制造商:NXP Semiconductors 功能描述:MOSFET N CH 55V 300MA SOT323
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