參數(shù)資料
型號: BSH101
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: N-channel enhancement mode MOS transistor
中文描述: 700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù): 6/12頁
文件大小: 643K
代理商: BSH101
2000 Jul 19
6
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH101
Fig.5 Switching times test circuit with input and output waveforms.
handbook, full pagewidth
MAM274
90 %
10 %
10 %
90 %
Vin
Vout
td(on)
ton
toff
tf
tr
td(off)
0
0
VDD
RL
Vout
Vin
Fig.6
Gate-source and drain-source voltages as
functions of total gate charge; typical values.
V
DD
= 30 V; I
D
= 0.35 A; T
amb
= 25
°
C.
(1) V
DS
.
(2) V
GS.
handbook, halfpage
(V)
10
QG (pC)
VDS
(V)
25
MGM196
(1)
(2)
0
2
4
6
8
0
1
3
5
7
9
1
1
1
1
1
1
2
0
5
10
15
20
30
Fig.7
Output characteristics; typical values.
T
amb
= 25
°
C; t
p
= 300
μ
s;
δ
= 0.
(1) V
GS
= 10 V.
(2) V
GS
= 8 V.
(3) V
GS
= 6 V.
(4) V
GS
= 5.5 V.
(5) V
GS
= 5 V.
(6) V
GS
= 4.5 V.
(7) V
GS
= 4 V.
(8) V
GS
= 3.5 V.
(9) V
GS
= 3 V.
handbook, halfpage
0
2
1
0
2
1
0
MGM194
4
6
8
VDS (V)
ID
(A)
(6)
(8)
(9)
(7)
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