參數(shù)資料
型號: BSH101
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: N-channel enhancement mode MOS transistor
中文描述: 700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù): 2/12頁
文件大小: 643K
代理商: BSH101
2000 Jul 19
2
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH101
FEATURES
Very low threshold
High-speed switching
No secondary breakdown
Direct interface to C-MOS, TTL etc.
APPLICATIONS
Power management
DC to DC converters
Battery powered applications
'Glue-logic'; interface between logic blocks and/or
periphery
General purpose switch.
DESCRIPTION
N-channel enhancement mode MOS transistor in a SOT23
SMD package.
PINNING - SOT23
PIN
SYMBOL
DESCRIPTION
1
2
3
g
s
d
gate
source
drain
Fig.1 Simplified outline and symbol.
handbook, halfpage
s
d
g
MAM273
2
1
3
Top view
QUICK REFERENCE DATA
SYMBOL
PARAMETERS
CONDITIONS
MIN.
MAX.
UNIT
V
DS
V
SD
V
GS
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
1
60
1
±
20
0.7
0.81
0.5
V
V
V
V
A
W
V
GD
= 0; I
S
= 0.5 A
V
DS
= V
GS
; I
D
= 1 mA
T
s
= 80
°
C
V
GS
= 10 V; I
D
= 0.35 A
T
s
= 80
°
C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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