型號(hào) 廠商 描述
m58wr032fb80zb6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
m58wr032fb80zb6e
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
m58wr032fb80zb6f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
m58wr032f-zb
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
m58wr032f-zbt
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 RECTIFIER SCHOTTKY SINGLE 1A 40V 25A-ifsm 0.9V-vf 10mA-ir DO-41 5K/REEL-13
m58wr032fb
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 DIODE, SCHOTTKY, 20V, 3A.
m58wr032ft60zb6e
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
m58wr032ft60zb6f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
m58wr032ft60zb6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
m58wr032ft70zb6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
m58wr032ft70zb6e
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
m58wr032ft70zb6f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
m58wr032ft70zb6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
m58wr032ft80zb6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
m59330p
2 3 4 5 6 7 8 9 10 11		 Renesas Technology Corp. LAN Transceiver
m59bw102
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
m59bw10225n1t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
m59bw102n
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
m59dr008
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008e100n1t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; No. of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
m59dr008e100n6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
m59dr008e100zb1t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008e100zb6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008e
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008ezb
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008fzb
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008en
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008f100n1t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008f100n6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008f100zb1t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008f100zb6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008e120n1t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008e120n6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008e120zb1t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008e120zb6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008f120n1t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008f120n6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008f120zb1t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008f120zb6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr008fn
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr016
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
m59dr016dzb
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
m59dr016c100zb1t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
m59dr016c100zb6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
m59dr016c
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
m59dr016c120zb1t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
m59dr016c120zb6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
m59dr016d
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
m59dr016d100zb1t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory