參數(shù)資料
型號: M59DR008F100N1T
廠商: 意法半導體
英文描述: 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
中文描述: 8兆位512KB的x16插槽,雙行,第低壓閃存
文件頁數(shù): 4/37頁
文件大?。?/td> 267K
代理商: M59DR008F100N1T
M59DR008E, M59DR008F
4/37
Table 3. Bank A, Top Boot Block Address
Table 4. Bank B, Top Boot Block Address
Size (KWord)
Address Range
4
7F000-7FFFF
4
7E000-7EFFF
4
7D000-7DFFF
4
7C000-7CFFF
4
7B000-7BFFF
4
7A000-7AFFF
4
79000-79FFF
4
78000-78FFF
32
70000-77FFF
32
68000-6FFFF
32
60000-67FFF
32
58000-5FFFF
32
50000-57FFF
32
48000-4FFFF
32
40000-47FFF
Size (KWord)
Address Range
32
38000-3FFFF
32
30000-37FFF
32
28000-2FFFF
32
20000-27FFF
32
18000-1FFFF
32
10000-17FFF
32
08000-0FFFF
32
00000-07FFF
Table 5. Bank B, Bottom Boot Block Address
Table 6. Bank A, Bottom Boot Block Address
Size (KWord)
Address Range
32
78000-7FFFF
32
70000-77FFF
32
68000-6FFFF
32
60000-67FFF
32
58000-5FFFF
32
50000-57FFF
32
48000-4FFFF
32
40000-47FFF
Size (KWord)
Address Range
32
38000-3FFFF
32
30000-37FFF
32
28000-2FFFF
32
20000-27FFF
32
18000-1FFFF
32
10000-17FFF
32
08000-0FFFF
4
07000-07FFF
4
06000-06FFF
4
05000-05FFF
4
04000-04FFF
4
03000-03FFF
4
02000-02FFF
4
01000-01FFF
4
00000-00FFF
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