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參數(shù)資料
| 型號： | M59BW102 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory |
| 中文描述： | 1兆位64Kb的x16插槽，突發(fā)低電壓快閃記憶體 |
| 文件頁數(shù)： | 15/24頁 |
| 文件大?。?/td> | 181K |
| 代理商： | M59BW102 |
15/24
M59BW102
Figure 11. Write AC Waveforms, W Controlled and Address Latch Enable Pulsed
Note: Address are latched on the falling edge of W, Data is latched on the rising edge of W.
AI03041B
E
G
W
A0-A15
DQ0-DQ15
VALID
VALID
VCC
tVCHEL
tWHEH
tWHWL
tELWL
tAVALL
tWHGL
tALLAX
tWHDX
tAVAV
tDVWH
tWLWH
tGHWL
ALE
tELALL
tALHWL
tWHALL
tEHGL
Table 16. Write AC Characteristics, Write Enable Controlled and Address Latch Enable Pulsed
(T
A
= 0 to 70°C)
Note: 1. These parameters are applicable only if the following cycle is for the same device.
Symbol
Alt
Parameter
M59BW102
25
V
CC
= 3.0V to 3.6V
Min
55
0
30
25
0
0
20
0
50
0
10
5
10
35
50
10
Unit
Max
t
AVAV
t
ELWL
t
WLWH
t
DVWH
t
WHDX
t
WHEH
t
WHWL (1)
t
GHWL
t
VCHEL
t
WHGL
t
ALHWL
t
AVALL
t
ELALL
t
ALLAX
t
WHALL (1)
t
EHGL
t
WC
t
CS
t
WP
t
DS
t
DH
t
CH
t
WPH
Address Valid to Next Address Valid
Chip Enable Low to Write Enable Low
Write Enable Low to Write Enable High
Input Valid to Write Enable High
Write Enable High to Input Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Output Enable High to Write Enable Low
V
CC
High to Chip Enable Low
Write Enable High to Output Enable Low
Address Latch Enable High to Write Enable Low
Address Valid to Address Latch Enable Low
Chip Enable Low to Address Latch Enable Low
Address Latch Enable Low to Address Transition
Write Enable High to Address Latch Enable Low
Chip Enable High to Output Enable Low
ns
ns
ns
ns
ns
ns
ns
ns
μs
ns
ns
ns
ns
ns
ns
ns
t
VCS
t
OEH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M59BW10225N1T | 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory |
| M59BW102N | 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory |
| M59DR008 | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008E100N1T | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; No. of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight |
| M59DR008E100N6T | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59BW10225N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 64Kb x16, Burst Low Voltage Flash Memory |
| M59BW102N | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 64Kb x16, Burst Low Voltage Flash Memory |
| M59DR008 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008E100N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
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