型號: | M59BW102 |
廠商: | 意法半導體 |
英文描述: | 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory |
中文描述: | 1兆位64Kb的x16插槽,突發(fā)低電壓快閃記憶體 |
文件頁數: | 12/24頁 |
文件大?。?/td> | 181K |
代理商: | M59BW102 |
相關PDF資料 |
PDF描述 |
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M59BW10225N1T | 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory |
M59BW102N | 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory |
M59DR008 | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
M59DR008E100N1T | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; No. of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight |
M59DR008E100N6T | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight |
相關代理商/技術參數 |
參數描述 |
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M59BW10225N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 64Kb x16, Burst Low Voltage Flash Memory |
M59BW102N | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 64Kb x16, Burst Low Voltage Flash Memory |
M59DR008 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
M59DR008E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
M59DR008E100N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |