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參數(shù)資料
| 型號(hào)： | M59BW102 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory |
| 中文描述： | 1兆位64Kb的x16插槽，突發(fā)低電壓快閃記憶體 |
| 文件頁數(shù)： | 3/24頁 |
| 文件大?。?/td> | 181K |
| 代理商： | M59BW102 |
3/24
M59BW102
SIGNAL DESCRIPTIONS
See Figure 1 and Table 1.
Address Inputs (A0-A15).
The address inputs
for the memory array are latched during a write op-
eration on the falling edge of Chip Enable E or
Write Enable W. When A9 is raised to V
ID
, either a
Read Electronic Signature Manufacturer or Device
Code is enabled depending on the combination of
levels on A0 and A1.
Data Inputs/Outputs (DQ0-DQ15).
The input is
data to be programmed in the memory array or a
command to be written to the C.I. Both are latched
on the rising edge of Chip Enable E or Write En-
able W. The output is data from the Memory Array,
the Electronic Signature Manufacturer or Device
codes, the Status register Data Polling bit DQ7,
the Toggle Bits DQ6 and DQ2, the Error bit DQ5
or the Erase Timer bit DQ3. Outputs are valid
when Chip Enable E and Output Enable G are ac-
tive. The output is high impedance when the chip
is deselected or the outputs are disabled.
Chip Enable (E).
The Chip Enable input acti-
vates the memory control logic, input buffers, de-
coders and sense amplifiers. E High deselects the
memory and reduces the power consumption to
the standby level. E can also be used to control
writing to the command register and to the memo-
ry array, while W remains at a low level.
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2.
Minimum Voltage may undershoot to –2V during transition and for less than 20ns.
Table 3. User Bus Operations
(1))
Note: 1. X = V
IL
or V
IH
.
Table 4. Read Electronic Signature (following AS instruction or with A9 = V
ID
)
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
0 to 70
°C
T
BIAS
Temperature Under Bias
–50 to 125
°C
T
STG
Storage Temperature
–65 to 150
°C
V
IO (2)
Input or Output Voltage
–0.6 to 5
V
V
CC
Supply Voltage
–0.6 to 5
V
V
(A9, E, G) (2)
A9, E, G Voltage
–0.6 to 13.5
V
Operation
E
G
W
ALE
A0
A1
A6
A9
A12
A15
DQ15-DQ0
Non Linear
Access Mode
V
IL
V
IL
V
IH
Pulse
X
X
X
X
X
X
Data Output
Linear Access
Cycle
V
IL
Rising
Edge
V
IH
V
IL
X
X
X
X
X
X
Data Output
Write Word
V
IL
V
IH
V
IL
V
IH
A0
A1
A6
A9
A12
A15
Data Input
Output Disable
V
IL
V
IH
V
IH
V
IH
X
X
X
X
X
X
Hi-Z
Standby
V
IH
X
X
X
X
X
X
X
X
X
Hi-Z
Code
E
G
W
A0
A1
Other
Address
DQ15-DQ8
DQ7-DQ0
Manufact. Code
V
IL
V
IL
V
IH
V
IL
V
IL
Don't Care
00h
20h
Device Code
V
IL
V
IL
V
IH
V
IH
V
IL
Don't Care
00h
C1h
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| M59BW10225N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 64Kb x16, Burst Low Voltage Flash Memory |
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| M59DR008E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
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