參數(shù)資料
型號(hào)： M59BW102
廠商： 意法半導(dǎo)體
英文描述： 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
中文描述： 1兆位64Kb的x16插槽，突發(fā)低電壓快閃記憶體
文件頁數(shù)： 11/24頁
文件大?。?/td> 181K
代理商： M59BW102
11/24
M59BW102
Table 13. Random Read Mode AC Characteristics
(
T
A
= 0 to 70°C)
Note: 1. This timing refers to a Load Capacitance (C
L
) of 30pF. If C
L
is higher, add 1ns for each extra 10pF.
Symbol
Alt
Parameter
Test Condition
M59BW102
Unit
25
V
CC
= 3.0V to 3.6V
Min
Typ
Max
t
ALHALL
t
ALW
Address Latch Enable High to Address
Latch Enable Low
ALE = Pulse
10
ns
t
ELALL
t
E
Chip Enable Low to Address Latch Enable
Low
10
ns
t
AXALL
t
AS
Address Transition to Address Latch
Enable Low
6
ns
t
EHALH
t
ELV
Chip Enable High to Address Latch Enable
High
3
ns
t
ALLGL
t
AG
Address Latch Enable Low to Output
Enable Low
7.5
ns
t
GHALH
t
QP
Output Enable High to Address Latch
Enable High
0
ns
t
GHGL
t
GW
Output Enable High to Output Enable Low
G = Pulse
14
ns
t
GLGH
t
GL
Output Enable Low to Output Enable High
48
ns
t
GLQV (1)
t
GACC
Output Enable Low to Output Valid
30
ns
t
ELQV (1)
t
EACC
Chip Enable Low to Output Valid
55
ns
t
GHEL
t
GE
Output Enable High to Chip Enable Low
–2
ns
t
EHQZ
t
EDF
Chip Enable High to Output Hi-Z
12
ns
t
ALHQZ
t
ADF
Address Latch Enable High to Output Hi-Z
20
ns
t
QVGH
t
QV
Output Valid to Output Enable High
10
ns
t
GHEH
t
GE
Output Enable High to Chip Enable High
0
ns
t
ELGL
t
EGL
Chip Enable Low to Output Enable Low
13
ns
t
EHQV
Chip Enable High to Data Hold
0
ns
t
ALLAX
Address Latch Enable Low to Address
Transition
30
ns
相關(guān)PDF資料
PDF描述
M59BW10225N1T 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
M59BW102N 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
M59DR008 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E100N1T Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; No. of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
M59DR008E100N6T Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M59BW10225N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
M59BW102N 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
M59DR008 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E100N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
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