- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359084 > M59DR008FZB (意法半導體) 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory PDF資料下載
參數(shù)資料
| 型號： | M59DR008FZB |
| 廠商： | 意法半導體 |
| 英文描述： | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| 中文描述： | 8兆位512KB的x16插槽，雙行，第低壓閃存 |
| 文件頁數(shù)： | 16/37頁 |
| 文件大?。?/td> | 267K |
| 代理商： | M59DR008FZB |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁當前第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁
M59DR008E, M59DR008F
16/37
Table 19. Status Register Bits
(1)
Note: 1. Logic level ’1’ is High, ’0’ is Low. -0-1-0-0-0-1-1-1-0- represent bit value in successive Read operations.
2. In case of double word program DQ7 refers to the last word input.
DQ
Name
Logic Level
Definition
Note
7
Data
Polling
’1’
Erase Complete or erase block
in Erase Suspend.
Indicates the P/E.C. status, check
during Program or Erase, and on
completion before checking bits DQ5
for Program or Erase Success.
’0’
Erase On-going
DQ
Program Complete or data of
non erase block during Erase
Suspend.
DQ
Program On-going
(2)
6
Toggle Bit
’-1-0-1-0-1-0-1-’
Erase or Program On-going
Successive reads output
complementary data on DQ6 while
Programming or Erase operations are
on-going. DQ6 remains at constant
level when P/E.C. operations are
completed or Erase Suspend is
acknowledged.
DQ
Program Complete
’-1-1-1-1-1-1-1-’
Erase Complete or Erase
Suspend on currently addressed
block
5
Error Bit
’1’
Program or Erase Error
This bit is set to ’1’ in the case of
Programming or Erase failure.
’0’
Program or Erase On-going
4
Reserved
3
Erase Time
Bit
’1’
Erase Timeout Period Expired
P/E.C. Erase operation has started.
Only possible command entry is Erase
Suspend (ES)
’0’
Erase Timeout Period On-going
An additional block to be erased in
parallel can be entered to the P/E.C:
2
Toggle Bit
’-1-0-1-0-1-0-1-’
Erase Suspend read in the
Erase Suspended Block.
Erase Error due to the currently
addressed block (when DQ5 =
’1’).
Indicates the erase status and allows
to identify the erased block.
1
Program on-going or Erase
Complete.
DQ
Erase Suspend read on non
Erase Suspend block.
1
Reserved
0
Reserved
相關PDF資料 |
PDF描述 |
|---|---|
| M59DR008EN | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008F | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008F100N1T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008F100N6T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008F100ZB1T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59DR016 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C100ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C120ZA6T | 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。